Growth Rate and Deposition Process of SiC with Water Vapor Introduced by CVD

JIAO Huan, ZHOU Wan-cheng, LI Xiang

Journal of Materials Engineering ›› 2000, Vol. 0 ›› Issue (12) : 12-14,18.

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Journal of Materials Engineering ›› 2000, Vol. 0 ›› Issue (12) : 12-14,18.

Growth Rate and Deposition Process of SiC with Water Vapor Introduced by CVD

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2000, 0(12): 12-14,18

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