Silicon Nanowires Fabricated by Oxide-assisted Growth Mechanism

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Journal of Materials Engineering ›› 2005, Vol. 0 ›› Issue (6) : 54-58.

Silicon Nanowires Fabricated by Oxide-assisted Growth Mechanism

PEI Lizhai, TANG Yuanhong, ZHANG Yong, GUO Chi, CHEN Yangwen

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Abstract

Many kinds of one-dimensional nanomaterials have been prepared by the oxide-assisted growth mechanism,which was proposed during the preparation of silicon nanowires. The oxide-assisted growth mechanism and preparation methods of silicon nanowires according to the oxide-assisted growth mechanism are introduced. The effects on different gases, pressures, and starting materials for synthesizing silicon nanowires using oxide-assisted method is reviewed in detail, and the development direction of studying silicon nanowires is also discussed.

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silicon nanowires / oxide-assisted growth / laser ablation / thermal evaporation

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PEI Lizhai, TANG Yuanhong, ZHANG Yong, GUO Chi, CHEN Yangwen. Silicon Nanowires Fabricated by Oxide-assisted Growth Mechanism[J]. Journal of Materials Engineering, 2005, 0(6): 54-58

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