Effect of Beam Density of Electron Beam on Phosphorus Impurity in Metallurgical Grade Silicon

JIANG Da-chuan, TAN Yi, DONG Wei, WANG Qiang, PENG Xu, LI Guo-bin

Journal of Materials Engineering ›› 2010, Vol. 0 ›› Issue (3) : 18-21.

PDF(383 KB)
PDF(383 KB)
Journal of Materials Engineering ›› 2010, Vol. 0 ›› Issue (3) : 18-21.

Effect of Beam Density of Electron Beam on Phosphorus Impurity in Metallurgical Grade Silicon

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2010, 0(3): 18-21

References

List( Publishing order | Descend order by publishing year | Descend order by cited within ) Chart analysis

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(383 KB)

Accesses

Citation

Detail
Sections
Recommended

/

〈 〉