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材料工程  2014, Vol. 0 Issue (9): 32-38    DOI: 10.11868/j.issn.1001-4381.2014.09.006
  材料与工艺 本期目录 | 过刊浏览 | 高级检索 |
退火温度对Ge/SiO2多层膜的结构和光学性能的影响
彭洁1, 李子全1,2, 刘劲松1, 蒋明1, 许奇1
1. 南京航空航天大学 材料科学与技术学院, 南京 211106;
2. 南京化工职业技术学院, 南京 210048
Effect of Annealing Temperature on Structure and Optical Properties of Ge/SiO2 Multilayer Films
PENG Jie1, LI Zi-quan1,2, LIU Jing-song1, JIANG Ming1, XU Qi1
1. College of Material Science and Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 211106, China;
2. Nanjing College of Chemical Technology, Nanjing 210048, China
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摘要 采用磁控溅射技术在石英衬底上制备出(Ge/SiO215多层膜,并在不同温度下对其进行退火处理。XRD和Raman结果表明:溅射态的薄膜为非晶态,当退火温度为500℃时开始出现明显的结晶衍射峰,随后晶化率明显增大,当600℃后,薄膜的晶化率几乎不变。FESEM和小角度X射线衍射结果表明:溅射态薄膜的层与层之间存在明显的界面,具有良好的周期性,升高退火温度,晶粒尺寸增大,但仍保持周期性结构。薄膜的紫外-可见光吸收光谱表明:随着退火温度的升高,吸收边发生红移,光学带隙从溅射态的1.86eV减小到600℃时的1.59eV。
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彭洁
李子全
刘劲松
蒋明
许奇
关键词 Ge/SiO2多层薄膜射频磁控溅射退火温度UV-VIS 光谱小角度X射线衍射    
Abstract:Multilayered (Ge/SiO2)15 film was deposited on quartz by radio frequency (RF) magnetron sputtering technique, and then annealed at different temperatures. XRD and Raman results indicate that the as-deposited film is amorphous. When the film is annealed at 500℃, obvious crystal diffraction peaks occur, and then the crystallinity of the film increases. When the annealing temperature goes beyond 600℃, the crystallinity of the film remains stable. The results of the FESEM and small angle X-ray diffraction(SAXRD) show that the distinct interface between the layers is observed in the as-deposited film, exhibiting periodic structure. As the annealing temperature increases, the film still keeps periodic structure and its crystal size increases. The UV-VIS spectra suggest that increasing annealing temperature leads to the red shift of absorption edge, and optical band gap of as-deposited sample reduces from 1.86eV(as-deposited) to 1.59eV (600℃).
Key wordsGe/SiO2 multilayer film    RF magnetron sputtering    annealing temperature    UV-VIS spectra    SAXRD
收稿日期: 2012-10-25     
1:  O484  
基金资助:江苏省自然科学基金项目(BK2009379)
通讯作者: 李子全(1964- ),男,教授,博士生导师,主要从事功能材料,联系地址:江苏省南京市江宁区将军大道29号南京航空航天大学材料学院(211106)     E-mail: ziquanli@nuaa.edu.cn
引用本文:   
彭洁, 李子全, 刘劲松, 蒋明, 许奇. 退火温度对Ge/SiO2多层膜的结构和光学性能的影响[J]. 材料工程, 2014, 0(9): 32-38.
PENG Jie, LI Zi-quan, LIU Jing-song, JIANG Ming, XU Qi. Effect of Annealing Temperature on Structure and Optical Properties of Ge/SiO2 Multilayer Films. Journal of Materials Engineering, 2014, 0(9): 32-38.
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http://jme.biam.ac.cn/jme/CN/10.11868/j.issn.1001-4381.2014.09.006      或      http://jme.biam.ac.cn/jme/CN/Y2014/V0/I9/32
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