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2222材料工程  2021, Vol. 49 Issue (5): 144-150    DOI: 10.11868/j.issn.1001-4381.2020.001169
  研究论文 本期目录 | 过刊浏览 | 高级检索 |
SiC/SiC复合材料在高温空气中的氧化行为
洪智亮1,*(), 张巧君2,3, 李开元1, 郭洪宝1, 张程煜3, 刘永胜3
1 中国航发商用航空发动机有限责任公司, 上海 200241
2 西安航空制动科技有限公司, 陕西 兴平 713106
3 西北工业大学 超高温复合材料重点实验室, 西安 710072
Oxidation behavior of SiC/SiC composites in air at high temperature
Zhi-liang HONG1,*(), Qiao-jun ZHANG2,3, Kai-yuan LI1, Hong-bao GUO1, Cheng-yu ZHANG3, Yong-sheng LIU3
1 AECC Commercial Aircraft Engine Co., Ltd., Shanghai 200241, China
2 Xi'an Aviation Brake Technology Co., Ltd., Xingping 713106, Shaanxi, China
3 Science and Technology on Thermosturctural Composite Materials Laboratory, Northwestern Polytechnical University, Xi'an 710072, China
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摘要 

连续碳化硅纤维增强碳化硅复合材料(SiC/SiC)是先进航空发动机热端部件的重要候选材料。在高温燃气环境中，SiC/SiC会发生氧化腐蚀，导致材料性能迅速恶化。为了揭示国产SiC/SiC复合材料在高温燃气环境中的氧化腐蚀行为，本工作测试了SiC/SiC复合材料的1100~1300℃空气氧化性能，获得了材料的氧化动力学曲线，利用SEM，XPS和XRD分析了材料的形貌、成分和物相演变规律，以阐明其氧化行为。结果表明：SiC/SiC复合材料在1100~1300℃的氧化动力学均遵循抛物线规律；其氧化物为SiO2。SiC/SiC在1100℃时仅发生轻微氧化，温度高于1200℃时复合材料的氧化程度随温度升高而加剧。在BN界面相和基体孔隙附近的氧化现象更为明显。SiC/SiC复合材料的弯曲强度随氧化程度增加而降低。
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洪智亮
张巧君
李开元
郭洪宝
张程煜
刘永胜
关键词 ： SiC/SiC复合材料,  氧化行为,  氧化机理,  损伤    
Abstract：

As one of important candidates for advanced aerocraft engine hot components, SiC/SiC composites would undergo oxidative and corrosive damage when subjected to high temperature combustion environment. Oxidation behavior of SiC/SiC composites at 1100-1300 ℃ in air was investigated in the present work, to clarify the oxidative and corrosive behavior of the composites. The oxidation kinetics curves were obtained. The morphology and composition evolution of the oxidized materials were analyzed by SEM, XPS and XRD. The results show that the oxidation kinetics of SiC/SiC composites at 1100-1300 ℃ follow the parabolic law and the oxides on the surface mainly consist of silica. Slight oxidation occurs at 1100 ℃. The oxidation rate increases with increasing temperature. The oxidation process is mainly concentrated in the BN interface phase and the pores of the matrix. The bending strength of the composite decreases with the oxidation extent.
Key words： SiC/SiC composite    oxidation behavior    oxidation mechanism    damage
收稿日期: 2020-12-18      出版日期: 2021-05-21
中图分类号:  TB332  
基金资助:上海市科学技术委员会科研计划项目(15DZ1161100);上海市科学技术委员会科研计划项目(15DZ1161100)；国防基础科研计划(JCKYS2019607003);国家重点研发计划(2016YFB1102502)
通讯作者: 洪智亮     E-mail: zhiliang_hong@163.com
作者简介: 洪智亮(1984-), 男, 高级工程师, 博士, 研究方向: 陶瓷基复合材料, 联系地址: 上海市闵行区莲花南路3998号(200241), zhiliang_hong@163.com
引用本文:   
洪智亮, 张巧君, 李开元, 郭洪宝, 张程煜, 刘永胜. SiC/SiC复合材料在高温空气中的氧化行为[J]. 材料工程, 2021, 49(5): 144-150.
Zhi-liang HONG, Qiao-jun ZHANG, Kai-yuan LI, Hong-bao GUO, Cheng-yu ZHANG, Yong-sheng LIU. Oxidation behavior of SiC/SiC composites in air at high temperature. Journal of Materials Engineering, 2021, 49(5): 144-150.
链接本文:  
http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2020.001169      或      http://jme.biam.ac.cn/CN/Y2021/V49/I5/144
Fig.1  SiC/SiC在不同温度的单位面积质量变化曲线
T/℃ k/(mg2·mm-4·h-1) Reference
1100 (1.20±0.67)×10-6 Present work
1200 (3.16±0.93)×10-6 Present work
1300 (2.33±0.51)×10-5 Present work
1200 (2.35±0.90)×10-8 [11]
1204 1.86×10-7 [10]
Table 1  SiC/SiC复合材料在不同温度的氧化速率常数
Fiber type Interface phase Density/(mg·cm-3) Porosity/% Sample size/mm
Domestic SiC BN 2.47 15.76 70 mm×9 mm×3.5 mm
Nicalon[10] PyC 2.30 8-12 23 mm×13 mm×2.5 mm
—[11] BN — — 10 mm×10 mm×4 mm
Table 2  CVI-SiC/SiC复合材料性能比较
Fig.2  SiC/SiC复合材料在不同温度氧化300 h后的XRD图谱
Fig.3  SiC/SiC复合材料在不同温度氧化300 h后的XPS谱
(a)Si2p；(b)O1s
Bonding form Atom fraction/%
1100 ℃ 1200 ℃ 1300 ℃
Si—C 29.92 — —
Si—O(SiO2) 57.68 42.45 65.06
Si—O(SiC) 12.40 57.55 34.94
Table 3  SiC/SiC氧化300 h XPS中Si2p峰各键合状态及含量
Bonding form Atom fraction/%
1100 ℃ 1200 ℃ 1300 ℃
Si—O(SiO2) 35.68 63.40 64.26
Si—O(SiC) 54.83 32.47 35.74
B—O 9.49 4.13 —
Table 4  SiC/SiC复合材料氧化300 h XPS分析O1s峰各键合状态及含量
Fig.4  SiC/SiC复合材料在不同温度下氧化300 h后的表面形貌和EDS图谱
(a)1100 ℃；(b)1200 ℃；(c)1300 ℃
Fig.5  SiC/SiC复合材料氧化300 h的截面SEM图(1)和EDS分析(2)
(a)1100 ℃；(b)1200 ℃；(c)1300 ℃
T/℃ Oxide layer/μm
1100 88.71±9.07
1200 111.62±13.51
1300 164.33±19.45
Table 5  SiC/SiC不同温度下氧化300 h的氧化层厚度
Fig.6  SiC/SiC 1200 ℃氧化不同时间的SEM图(1)及EDS分析(2)
(a)200 h；(b)300 h
Fig.7  SiC/SiC复合材料不同温度氧化300 h后的弯曲强度保持率
Fig.8  SiC/SiC复合材料氧化后的弯曲断口形貌
(a)1100 ℃；(b)1200 ℃；(c)，(d)1300 ℃
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