利用磁控溅射的方法在金刚石薄膜表面沉积了250nm厚的金属Ti层,通过300～600℃的真空热处理,促进了Ti与金刚石之间的界面扩散反应。利用俄歇电子能谱研究了Ti/金刚石薄膜界面的结合状态,发现在界面上形成了Ti的碳化物。并发现Ti与金刚石薄膜发生了大幅度的界面扩散反应,Ti元素渗入金刚石层达600nm,促进了Ti与金刚石之间形成良好的化学结合,为获得高性能的金刚石切削工具提供了可能。界面扩散反应动力学的研究表明Ti/金刚石界面扩散反应的表观活化能为12.3kJ/mol.过高的热处理温度(高于600℃)会导致金属Ti层严重的氧化,不利于界面扩散反应的进行。热处理时间的增加有利于TiC的生成。

A Ti layer with a thickness of 250nm was successfully deposited on the surface of a diamond thin film substrate using RF magnetron sputtering technique.The interface reaction between Ti and diamond was promoted by vacuum annealing at the range of 300℃to 600℃.The Auger profile results showed that the width of interface layer was more than 600nm.The formation of TiC at the interface was confirmed by C KLL line shape.The chemical reaction suggested that there was strong chemical bond in interface of Ti/diamond,which was an important factor for the high adhesion strength between metal and diamond.This provided the possibility to produce cutting tools with high performance.The activation energy of the diffusion reaction was 12.3kJ/mol.Ti layer was seriously oxidized when the annealing temperature reached 600℃.To increase annealing time may be a good way to increase the interface reaction.