采用Sol-Gel工艺制备了Si基Bi₄Ti₃O₁₂铁电薄膜.研究了退火温度对Si基Bi₄Ti₃O₁₂薄膜晶相结构、晶粒尺寸及薄膜表面形貌的影响.研究表明,退火温度低于450℃时Bi₄Ti₃O₁₂薄膜为非晶状态,退火温度在550～850℃范围时均为多晶薄膜,而且随退火温度升高,Bi₄Ti₃O₁₂薄膜更趋向于沿c轴取向的生长;而晶粒尺寸及薄膜粗糙度随退火温度升高而增大,但在较高温度下增长速度趋缓.

The ferroelectric thin films of Bi₄Ti₃O₁₂on Sisubstrates were fabricated by Sol-Gel-technique.The effects of the annealing temperature on crystal phase,grain size and surface morphology of Bi₄Ti₃O₁₂ferroelectric thin films were studied.The results indicate that the Bi₄Ti₃O₁₂thin films are amorphous when the annealing temperature is below 450℃,and the Bi₄Ti₃O₁₂thin films are polycrystalline when the annealing temperatures are from 550℃ to 850℃.Furthermore,the Bi₄Ti₃O₁₂has a higher degree of texture or prefers orientation in the c axis with the increase of the annealing temperature,the grain size and surface roughness increase with the increase of the anneal-ing temperature as well.