采用电子束蒸发法制备掺杂铈的TiO2薄膜,研究掺杂铈对TiO2薄膜的折射率、透射率和禁带宽度的影响。实验发现适量掺杂CeO2会提高薄膜的折射率;并使氧化钛薄膜的禁带宽度Eg从3.27eV减小到2.51eV,从而使光本征吸收边从380nm红移到495nm,大大提高了对太阳光的利用能力。
Abstract
TiO2 thin film was successfully prepared with electron beam evaporation.The influences of refractive index,transmittance and band gap on doped TiO2 film were studied.The results indicate that adaptive Ce-doped improves the refractive index of TiO2 film;doping CeO2 makes band gap value reducing from 3.27eV to 2.5eV,resulting in the absorption edge shifting from 380nm to 495nm.In this way,more solar energy is utilized.
关键词
电子束蒸发 /
TiO2薄膜 /
CeO2掺杂 /
折射率 /
禁带宽度
{{custom_keyword}} /
Key words
electron beam evaporation /
TiO2 film /
doped-CeO2 /
refractive index /
band gap
{{custom_keyword}} /
中图分类号：
TB303
{{custom_clc.code}}
({{custom_clc.text}})
{{custom_sec.title}}
{{custom_sec.title}}
{{custom_sec.content}}
参考文献
[1] O'REGAN B,GRATZEL M.A low-cost,high-efficiency solar cell based on dye-sensitized colloid TiO2 film[J].Nature,1991,353:737-739.
[2] D'ORAZIO A,DE SARIO M,MESCIA L,et al.Design of Er3t doped SiO2 TiO2 planar waveguide amplier[J].Journal of Non-Crystalline Solids,2003,322,278-283.
[3] BESSERGENEVA V G,KHMELINSKII I V,PEREIRA J F,et al.Preparation of TiO2 films by CVD method and its electrical,structural and optical properties[J].Vacuum,2002,54:275-279.
[4] 高濂,郏珊,张青红.纳米氧化钛光催化材料及应用[M].北京:化学工业出版社,2002.74.
[5] DIANA MARDARE,TASCA M,DELIBAS M,et al.On the structural properties and optical transmittance of TiO2r.f.sput-tered thin films[J].Applied Surface Science,2000,156:200-206.
[6] 杨宗棉.固体导论[M].上海:上海交通大学出版社,1993.79.
{{custom_fnGroup.title_cn}}
脚注
{{custom_fn.content}}
基金
国家自然科学基金(50171053);航空基础科学基金(96G53084)
{{custom_fund}}
PDF(755 KB)
