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材料工程  2015, Vol. 43 Issue (1): 44-48    DOI: 10.11868/j.issn.1001-4381.2015.01.008
  材料与工艺 本期目录 | 过刊浏览 | 高级检索 |
退火对ZnO/Cu/ZnO透明导电薄膜性能的影响
李文英1, 钟建2, 张柯2, 汪元元2, 尹桂林2, 何丹农1,2
1. 上海交通大学 材料科学与工程学院, 上海 200240;
2. 纳米技术及应用国家工程研究中心, 上海 200241
Effects of Annealing on Properties of ZnO/Cu/ZnO Transparent Conductive Film
LI Wen-ying1, ZHONG Jian2, ZHANG Ke2, WANG Yuan-yuan2, YIN Gui-lin2, HE Dan-nong1,2
1. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
2. National Engineering Research Center for Nanotechnology, Shanghai 200241, China
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摘要 室温下利用磁控溅射制备了ZnO/Cu/ZnO透明导电薄膜,采用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、霍尔效应测量仪和紫外-可见分光光度计研究了薄膜的结构、形貌、电学及光学等性能与退火温度之间的关系.结果表明:退火前后薄膜均具有ZnO(002)择优取向,随着退火温度的升高,薄膜的晶化程度、晶粒粒径及粗糙度增加,薄膜电阻率先降低后升高,光学透过率和禁带宽度先升高后降低.150℃下真空退火的ZnO/Cu/ZnO薄膜的性能最佳,最高可见光透光率为90.5%,电阻率为1.28×10-4Ω·cm,载流子浓度为4.10×1021cm-3.
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李文英
钟建
张柯
汪元元
尹桂林
何丹农
关键词 退火ZnOCu透明导电薄膜    
Abstract:ZnO/Cu/ZnO transparent conductive thin film was prepared by magnetic sputtering deposition at room temperature. The relationships between post-annealing and the structure, morphology, electrical and optical properties of the multilayer film were investigated by X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), Hall effect measurement system and UV-Vis spectrophotometer. The results indicate that ZnO films have (002) preferential orientation before and after annealing.With the increase of annealing temperature, the crystallization, grain size and surface roughness increase. The resistivity decreases at first and then increases, while the optical transmittance and band gap energy increase at first and then decrease. ZnO/Cu/ZnO film annealed at 150℃ has the best performance with the highest transmittance of 90.5% in the visible range, a resistivity of 1.28×10-4Ω·cm and a carrier concentration of 4.10×1021cm-3.
Key wordsannealing    ZnO    Cu    transparent conductive film
收稿日期: 2013-06-08     
1:  TN304  
  O484  
基金资助:科技部国际合作项目(2011DFA50530);上海市纳米专项(12nm0504800)
通讯作者: 何丹农(1956-),男,教授,研究方向:纳米功能材料及其应用,联系地址:上海市闵行区东川路800号上海交通大学材料科学与工程学院(200240),hdnbill@163.com     E-mail: hdnbill@163.com
引用本文:   
李文英, 钟建, 张柯, 汪元元, 尹桂林, 何丹农. 退火对ZnO/Cu/ZnO透明导电薄膜性能的影响[J]. 材料工程, 2015, 43(1): 44-48.
LI Wen-ying, ZHONG Jian, ZHANG Ke, WANG Yuan-yuan, YIN Gui-lin, HE Dan-nong. Effects of Annealing on Properties of ZnO/Cu/ZnO Transparent Conductive Film. Journal of Materials Engineering, 2015, 43(1): 44-48.
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http://jme.biam.ac.cn/jme/CN/10.11868/j.issn.1001-4381.2015.01.008      或      http://jme.biam.ac.cn/jme/CN/Y2015/V43/I1/44
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