Yao WANG1,2, Yang CHEN1,2,*(), Ning QIAO1,2, Xin LI3, Wen-ting ZHANG1,2
1 College of Materials Science and Engineering, North China University of Science and Technology, Tangshan 063009, Hebei, China 2 Hebei Provincial Key Laboratory of Inorganic Nonmetallic Materials, Tangshan 063009, Hebei, China 3 College of Civil and Architectual Engineering, North China University of Science and Technology, Tangshan 063009, Hebei, China
SiC whiskers were prepared on the matrix of graphite by using high hydrogenous silicone oil(PSO) as raw material. The effect of surface conditions of graphite and heating temperature on the growth of SiC whisker was mainly studied in this paper. The main factor which affects the nucleation and growth of SiC whisker is the heating temperature, with the heating temperature rising, the production of SiC whisker increases. The surface condition of graphite matrix also influences the growth of SiC whisker. With the nucleation points provided by graphite matrix defects increasing, the production of SiC whisker incleases and SiC whisker starts to overlap with each other. The formation process of SiC whisker includes two steps:nucleation and growth. SiC whisker nucleates at low temperature and grows at high temperature, which follows the VLS (vapor-liquid-solid) growth mechanism.
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