One step synthesis of graphene oxide under low-temperature and its microwave reduction
YUWEN Chao1,2,3, LIU Bing-guo1,2,3, ZHANG Li-bo1,2,3, GUO Sheng-hui1,2,3, PENG Jin-hui1,2,3
1. Faculty of Metallurgy and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China;
2. Yunnan Provincial Key Laboratory of Intensification Metallurgy, Kunming 650093, China;
3. The Key Laboratory of Unconventional Metallurgy(Ministry of Education), Kunming University of Science and Technology, Kunming 650093, China
Abstract：The graphene oxide was prepared via one step under low-temperature with natural flake graphite as raw material. Factors affecting oxidation degree and layer spacing of graphene oxide were discussed in the process of low-temperature oxidation, such as the dosage of oxidant and oxidation time in system. The results indicate that high C-O bond and low defect structure (ID:IG=0.63) graphene oxide with the carbon and oxygen atom ratio of 1.98 can be prepared in the condition of the potassium permanganate with natural flake graphite mass ratio of 1:3, oxidation temperature of 0℃, oxidation time of 48h.This way avoids the increase of graphene oxide defects in the process of Hummers preparation due to the formation of CO2, which leads to the hexagon fracture and the absence of carbon atoms. After microwave reduction, the reduced graphene oxide with low defect is obtained, which the distance between defects(LD)is 12nm,the defect density(nD) is 2.21×1011cm-2 and the ratio of ID:IG is only 0.85 (ΓG=32.1cm-1).
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