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材料工程  2019, Vol. 47 Issue (8): 103-109    DOI: 10.11868/j.issn.1001-4381.2018.001048
  研究论文 本期目录 | 过刊浏览 | 高级检索 |
KH-SiO2/PES/BMI-F51复合材料的介电性能
陈宇飞1,2, 耿成宝1, 郭红缘1, 岳春艳1, 柴铭茁1
1. 哈尔滨理工大学 材料科学与工程学院, 哈尔滨 150040;
2. 哈尔滨理工大学 工程电介质及应用技术教育部重点实验室, 哈尔滨 150080
Dielectric properties of KH-SiO2/PES/BMI-F51 composites
CHEN Yu-fei1,2, GENG Cheng-bao1, GUO Hong-yuan1, YUE Chun-yan1, CHAI Ming-zhuo1
1. School of Materials Science and Engineering, Harbin University of Science and Technology, Harbin 150040, China;
2. Key Laboratory of Engineering Dielectrics and Its Application(Ministry of Education), Harbin University of Science and Technology, Harbin 150080, China
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摘要 采用3-缩水甘油醚氧基丙基三甲氧基硅烷(KH-560)修饰纳米二氧化硅(nano-SiO2)获得改性纳米二氧化硅(KH-SiO2)。以酚醛环氧树脂(F51)和双马来酰亚胺(BMI)作为基体,添加4%(质量分数,下同)聚醚砜(PES)和不同含量(0.5%~2.5%)的KH-SiO2,制备KH-SiO2/PES/BMI-F51多相复合材料。红外光谱(FT-IR)、扫描电镜(SEM)和透射电镜结果表明:纳米SiO2表面修饰效果良好,纳米粒子团聚倾向减弱,粒径减小,比表面积增大。介电性能测试结果表明:随着KH-SiO2掺杂量的增加,材料的介电常数先降低后升高,介电损耗没有明显变化,体积电阻率和击穿强度先升高后降低。当KH-SiO2掺杂量为1.5%时,10Hz下介电常数和介电损耗角正切分别为4.55和0.0029,体积电阻率和击穿强度分别为1.74×1014Ω·m和29.11kV/mm,比树脂基体提高了68.9%和35.9%。
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陈宇飞
耿成宝
郭红缘
岳春艳
柴铭茁
关键词 双马来酰亚胺酚醛环氧聚醚砜二氧化硅介电性能    
Abstract:KH-SiO2 was obtained by using 3-glycid-oxypropyl-trimethoxy-silane (KH-560) to modify nano-silica (nano-SiO2). KH-SiO2/PES/BMI-F51 multi-phase composite was prepared, the phenolic epoxy resin (F51) and bismaleimide (BMI) as the matrix, 4%(mass fraction, the same below) polyethe-rsulfone (PES) as toughening agent and different contents (0.5%-2.5%) of KH-SiO2 as modifier. The results of Fourier transform infrared spectroscopy (FT-IR), scanning electron microscope (SEM) and transmission electron microscope (TEM) show that the surface modification of nano-SiO2 is favourable, the agglomeration tendency of nanoparticles is weakened, the size is decreased and the specific surface area is increased. Dielectric properties test displays that the dielectric constant of the material is decreased first and then increased with the increase of doping amount of KH-SiO2. There is no significant change in dielectric loss tangent, and the volume resistivity and breakdown strength are increased first and then decreased. The dielectric constant and dielectric loss tangent of composite reach 4.55 and 0.0029 at 10Hz, respectively, when the doping amount of KH-SiO2 is 1.5%. The volume resistivity and breakdown strength are 1.74×1014Ω·m and 29.11kV/mm, respectively, which are 68.9% and 35.9% higher than that of resin matrix.
Key wordsbismaleimide    polyethersulfone    phenolic epoxy    silica    dielectric property
收稿日期: 2018-08-28      出版日期: 2019-08-22
中图分类号:  TB332  
通讯作者: 陈宇飞(1963-),女,教授,博士,主要从事聚合物基复合材料相关研究,联系地址:黑龙江省哈尔滨市香坊区林园路4号哈尔滨理工大学材料科学与工程学院(150040),E-mail:chenyufei@hrbust.edu.cn.     E-mail: chenyufei@hrbust.edu.cn
引用本文:   
陈宇飞, 耿成宝, 郭红缘, 岳春艳, 柴铭茁. KH-SiO2/PES/BMI-F51复合材料的介电性能[J]. 材料工程, 2019, 47(8): 103-109.
CHEN Yu-fei, GENG Cheng-bao, GUO Hong-yuan, YUE Chun-yan, CHAI Ming-zhuo. Dielectric properties of KH-SiO2/PES/BMI-F51 composites. Journal of Materials Engineering, 2019, 47(8): 103-109.
链接本文:  
http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2018.001048      或      http://jme.biam.ac.cn/CN/Y2019/V47/I8/103
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