KH-SiO<sub>2</sub>/PES/BMI-F51复合材料的介电性能

doi:10.11868/j.issn.1001-4381.2018.001048

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摘要

采用3-缩水甘油醚氧基丙基三甲氧基硅烷（KH-560）修饰纳米二氧化硅（nano-SiO₂）获得改性纳米二氧化硅（KH-SiO₂）。以酚醛环氧树脂（F51）和双马来酰亚胺（BMI）作为基体，添加4%（质量分数，下同）聚醚砜（PES）和不同含量（0.5%~2.5%）的KH-SiO₂，制备KH-SiO₂/PES/BMI-F51多相复合材料。红外光谱（FT-IR）、扫描电镜（SEM）和透射电镜结果表明：纳米SiO₂表面修饰效果良好，纳米粒子团聚倾向减弱，粒径减小，比表面积增大。介电性能测试结果表明：随着KH-SiO₂掺杂量的增加，材料的介电常数先降低后升高，介电损耗没有明显变化，体积电阻率和击穿强度先升高后降低。当KH-SiO₂掺杂量为1.5%时，10Hz下介电常数和介电损耗角正切分别为4.55和0.0029，体积电阻率和击穿强度分别为1.74×10¹⁴Ω·m和29.11kV/mm，比树脂基体提高了68.9%和35.9%。

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	陈宇飞
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	柴铭茁

关键词 ：双马来酰亚胺, 酚醛环氧, 聚醚砜, 二氧化硅, 介电性能

Abstract：

KH-SiO₂ was obtained by using 3-glycid-oxypropyl-trimethoxy-silane (KH-560) to modify nano-silica (nano-SiO₂). KH-SiO₂/PES/BMI-F51 multi-phase composite was prepared, the phenolic epoxy resin (F51) and bismaleimide (BMI) as the matrix, 4%(mass fraction, the same below) polyethe-rsulfone (PES) as toughening agent and different contents (0.5%-2.5%) of KH-SiO₂ as modifier. The results of Fourier transform infrared spectroscopy (FT-IR), scanning electron microscope (SEM) and transmission electron microscope (TEM) show that the surface modification of nano-SiO₂ is favourable, the agglomeration tendency of nanoparticles is weakened, the size is decreased and the specific surface area is increased. Dielectric properties test displays that the dielectric constant of the material is decreased first and then increased with the increase of doping amount of KH-SiO₂. There is no significant change in dielectric loss tangent, and the volume resistivity and breakdown strength are increased first and then decreased. The dielectric constant and dielectric loss tangent of composite reach 4.55 and 0.0029 at 10Hz, respectively, when the doping amount of KH-SiO₂ is 1.5%. The volume resistivity and breakdown strength are 1.74×10¹⁴Ω·m and 29.11kV/mm, respectively, which are 68.9% and 35.9% higher than that of resin matrix.

Key words： bismaleimide polyethersulfone phenolic epoxy silica dielectric property

收稿日期: 2018-08-28 出版日期: 2019-08-22

中图分类号:

TB332

基金资助:哈尔滨创新人才专项(2015RAXXJ029)

通讯作者: 陈宇飞 E-mail: chenyufei@hrbust.edu.cn

作者简介: 陈宇飞(1963-), 女, 教授, 博士, 主要从事聚合物基复合材料相关研究, 联系地址:黑龙江省哈尔滨市香坊区林园路4号哈尔滨理工大学材料科学与工程学院(150040), E-mail:chenyufei@hrbust.edu.cn

引用本文:

陈宇飞, 耿成宝, 郭红缘, 岳春艳, 柴铭茁. KH-SiO₂/PES/BMI-F51复合材料的介电性能[J]. 材料工程, 2019, 47(8): 103-109.
Yu-fei CHEN, Cheng-bao GENG, Hong-yuan GUO, Chun-yan YUE, Ming-zhuo CHAI. Dielectric properties of KH-SiO₂/PES/BMI-F51 composites. Journal of Materials Engineering, 2019, 47(8): 103-109.

链接本文:

http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2018.001048 或 http://jme.biam.ac.cn/CN/Y2019/V47/I8/103

Table 1 样品编号与组分

Fig.1 KH-SiO₂的结构模拟图

Fig.2 Nano-SiO₂和KH-SiO₂的红外光谱

Fig.3 Nano-SiO₂和KH-SiO₂的SEM图
(a)nano-SiO₂; (b)KH-SiO₂

Fig.4 KH-SiO₂的TEM图

Fig.5 复合材料的SEM图
(a)样品A; (b)样品B; (c)，(d)样品C3

Fig.6 复合材料的介电常数

Fig.7 复合材料的介电损耗角正切

Fig.8 样品的体积电阻率和击穿强度

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