Research progress in stannous oxide thin film transistors
DENG Pei-miao1, NING Hong-long1, XIE Wei-guang2, LIU Xian-zhe1, DENG Yu-xi1, YAO Ri-hui1, PENG Jun-biao1
1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;
2. Guangdong Vacuum Film Technology and New Energy Material Engineering Technology Center, Jinan University, Guangzhou 510632, China
Abstract：Due to its unique optical and electrical properties, p-type metal oxide materials stannous oxide has been favored by more and more people in various fields such as catalysis, sensing and optoelectronic devices.This paper focuses on the research and application of stannous oxide in thin film transistors. As a core component of display driver panels, thin film transistors play an important role in the display.The research progress of p-type stannous oxide thin film transistors was summarized in this paper, which includes the analysis of the microcosmic properties of stannous oxide, the preparation of stannous oxide thin film materials and the fabrication methods of transistors. By introducing the crystal and electronic structure of stannous oxide in details, the microcosmic regul-ation mechanism of the properties of tin oxide was discussed. Through the preparation of stannous oxide materials and the research and application of the devices, the problems of low current-to-switch ratio faced by stannous oxide thin film transistors were analyzed and their prospects in the direction of the complementary metal-oxide-semiconductor devices were put forward, in order to provide a refere-nce for the preparation of p-type metal oxide thin film transistors which are stable and eco-friendly.
邓培淼, 宁洪龙, 谢伟广, 刘贤哲, 邓宇熹, 姚日晖, 彭俊彪. 氧化亚锡薄膜晶体管的研究进展[J]. 材料工程, 2020, 48(4): 83-88.
DENG Pei-miao, NING Hong-long, XIE Wei-guang, LIU Xian-zhe, DENG Yu-xi, YAO Ri-hui, PENG Jun-biao. Research progress in stannous oxide thin film transistors. Journal of Materials Engineering, 2020, 48(4): 83-88.
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