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材料工程  2020, Vol. 48 Issue (4): 83-88    DOI: 10.11868/j.issn.1001-4381.2019.000065
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氧化亚锡薄膜晶体管的研究进展
邓培淼1, 宁洪龙1, 谢伟广2, 刘贤哲1, 邓宇熹1, 姚日晖1, 彭俊彪1
1. 华南理工大学 发光材料与器件国家重点实验室, 广州 510640;
2. 暨南大学 广东省真空薄膜技术与新能源材料工程技术中心, 广州 510632
Research progress in stannous oxide thin film transistors
DENG Pei-miao1, NING Hong-long1, XIE Wei-guang2, LIU Xian-zhe1, DENG Yu-xi1, YAO Ri-hui1, PENG Jun-biao1
1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;
2. Guangdong Vacuum Film Technology and New Energy Material Engineering Technology Center, Jinan University, Guangzhou 510632, China
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摘要 p型金属氧化物材料氧化亚锡由于其特有的光学和电学性能,使得其在催化、传感、光电器件等领域受到越来越多人的青睐。本文重点介绍了氧化亚锡在薄膜晶体管中的研究应用,薄膜晶体管作为显示器驱动面板核心部件,其在显示器中的作用至关重要。本文归纳了氧化亚锡薄膜晶体管的研究进展,对氧化亚锡微观性能分析、氧化亚锡薄膜材料制备以及晶体管制备方法等进行介绍。通过对氧化亚锡晶体结构以及电子结构进行详细介绍,探讨了氧化亚锡性能微观调控机制;并通过对氧化亚锡材料的制备以及器件的应用研究,分析了氧化亚锡薄膜晶体管所面临的器件电流开关比低的问题并展望其在互补金属氧化物半导体器件方向的前景,以期为制备稳定和环保的p型金属氧化物薄膜晶体管提供参考。
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邓培淼
宁洪龙
谢伟广
刘贤哲
邓宇熹
姚日晖
彭俊彪
关键词 p型材料氧化亚锡薄膜晶体管微观调控机制    
Abstract:Due to its unique optical and electrical properties, p-type metal oxide materials stannous oxide has been favored by more and more people in various fields such as catalysis, sensing and optoelectronic devices.This paper focuses on the research and application of stannous oxide in thin film transistors. As a core component of display driver panels, thin film transistors play an important role in the display.The research progress of p-type stannous oxide thin film transistors was summarized in this paper, which includes the analysis of the microcosmic properties of stannous oxide, the preparation of stannous oxide thin film materials and the fabrication methods of transistors. By introducing the crystal and electronic structure of stannous oxide in details, the microcosmic regul-ation mechanism of the properties of tin oxide was discussed. Through the preparation of stannous oxide materials and the research and application of the devices, the problems of low current-to-switch ratio faced by stannous oxide thin film transistors were analyzed and their prospects in the direction of the complementary metal-oxide-semiconductor devices were put forward, in order to provide a refere-nce for the preparation of p-type metal oxide thin film transistors which are stable and eco-friendly.
Key wordsp-type material    stannous oxide    thin-film transistor    microcosmic regulation mechanism
收稿日期: 2019-01-18      出版日期: 2020-04-23
中图分类号:  TN386.1  
通讯作者: 姚日晖(1981-),男,副教授,博士,研究方向:光电材料及其器件,联系地址:广东省广州市天河区五山路381号华南理工大学材料科学与工程学院(510640),E-mail:yaorihui@scut.edu.cn     E-mail: yaorihui@scut.edu.cn
引用本文:   
邓培淼, 宁洪龙, 谢伟广, 刘贤哲, 邓宇熹, 姚日晖, 彭俊彪. 氧化亚锡薄膜晶体管的研究进展[J]. 材料工程, 2020, 48(4): 83-88.
DENG Pei-miao, NING Hong-long, XIE Wei-guang, LIU Xian-zhe, DENG Yu-xi, YAO Ri-hui, PENG Jun-biao. Research progress in stannous oxide thin film transistors. Journal of Materials Engineering, 2020, 48(4): 83-88.
链接本文:  
http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2019.000065      或      http://jme.biam.ac.cn/CN/Y2020/V48/I4/83
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