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材料工程  2020, Vol. 48 Issue (6): 112-117    DOI: 10.11868/j.issn.1001-4381.2019.000323
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非晶AlBN介质薄膜的制备及相关特性研究
刘峰峰1,2, 李玉雄1,2, 隋展鹏2, 蔡勇2, 张永红3, 蒋春萍2
1. 中国科学技术大学 纳米技术与纳米仿生学院, 合肥 230026;
2. 中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123;
3. 中国科学院 苏州纳米技术与纳米仿生研究所 纳米真空互联实验站, 江苏 苏州 215123
Preparation and relevant properties of amorphous AlBN dielectric films
LIU Feng-feng1,2, LI Yu-xiong1,2, SUI Zhan-peng2, CAI Yong2, ZHANG Yong-hong3, JIANG Chun-ping2
1. School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China;
2. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China;
3. Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China
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摘要 采用脉冲激光沉积(PLD)技术在GaN (002)上沉积非晶AlBN介质薄膜。利用X射线衍射技术(XRD)、透射电子显微镜(TEM)和X射线光电子能谱(XPS)等技术分别对介质薄膜的晶体结构、成分进行表征,并采用导电原子力显微镜(CAFM)以及I-V等测试手段对不同厚度薄膜的电学性质进行测试。结果表明:不同厚度的AlBN介质薄膜均为非晶,薄膜中B含量约为6.7%(原子分数)。厚度为3 nm和18 nm的AlBN介质薄膜的表面粗糙度(Rq)分别为0.209 nm和0.116 nm,薄膜表面平整均匀,18 nm薄膜施加±10 V电压时,没有出现明显的漏电流。但在金属-介质-金属(MIM)结构中,18 nm薄膜结构中出现较大漏电流,漏电流密度在-2 V时约为-2×10-4 A/cm2
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刘峰峰
李玉雄
隋展鹏
蔡勇
张永红
蒋春萍
关键词 AlBN脉冲激光沉积非晶薄膜    
Abstract:Amorphous AlBN dielectric films were deposited on GaN (002) by pulsed laser deposition (PLD). The crystal structure and composition of the grown films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Conductive atomic force microscope (CAFM) and I-V methods were also used to test the electrical properties of films with different thickness. The results show that the AlBN dielectric films with different thickness is amorphous, and the content of boron in all the films is about 6.7%(atom fraction). The root-mean-aquare (RMS) surface roughness Rq of the films with thickness of 3 nm and 18 nm are only 0.209 nm and 0.116 nm, respectively, indicating smooth surface of these AlBN film. When the voltage of ±10 V is applied, there is no obvious leakage current in the film with a thicknes of 18 nm. However, in the metal-insulator-metal (MIM) structure, a large leakage current appears in the 18 nm thin film structure, and the leakage current density is about -2×10-4 A/cm2 at -2 V.
Key wordsAlBN    pulsed laser deposition    amorphous film
收稿日期: 2019-04-08      出版日期: 2020-06-15
中图分类号:  O484  
通讯作者: 蒋春萍(1973-),女,研究员,博士,主要从事半导体材料及器件方面的研究工作,联系地址:江苏省苏州市工业园区若水路398号苏州纳米所(215123), cpjiang2008@sinano.ac.cn     E-mail: cpjiang2008@ sinano.ac.cn
引用本文:   
刘峰峰, 李玉雄, 隋展鹏, 蔡勇, 张永红, 蒋春萍. 非晶AlBN介质薄膜的制备及相关特性研究[J]. 材料工程, 2020, 48(6): 112-117.
LIU Feng-feng, LI Yu-xiong, SUI Zhan-peng, CAI Yong, ZHANG Yong-hong, JIANG Chun-ping. Preparation and relevant properties of amorphous AlBN dielectric films. Journal of Materials Engineering, 2020, 48(6): 112-117.
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http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2019.000323      或      http://jme.biam.ac.cn/CN/Y2020/V48/I6/112
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