多元施主掺杂对直流ZnO压敏陶瓷结构与电气性能的影响

doi:10.11868/j.issn.1001-4381.2020.001042

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摘要

采用传统的陶瓷烧结工艺制备B₂O₃，In₂O₃，Al₂O₃多元施主掺杂的直流ZnO压敏陶瓷样品，考察不同掺杂比(0.1%~0.4%，摩尔分数)的B₂O₃对直流ZnO压敏陶瓷样品微观结构和电气性能的影响。利用X射线衍射仪、扫描电子显微镜、能量色散X射线光谱及数字源表等分别对样品的物相、微观形貌、成分及电性能进行表征。结果表明，多元施主掺杂剂(Al₂O₃，In₂O₃和B₂O₃)的共掺杂明显改善直流ZnO压敏陶瓷的综合性能，其中，Al³⁺提高样品的电导率，降低样品的残压比；In³⁺通过钉扎效应限制晶粒的生长，改善样品的电压梯度；B³⁺的掺杂增加样品的表面态密度，提高势垒高度并有效抑制泄漏电流的增加。B₂O₃掺杂量为0.3%时，样品的综合性能最优：电压梯度为486 V/mm，泄漏电流密度为0.58 μA/cm²，非线性系数为85，残压比为1.55。

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	程宽
	赵洪峰
	周远翔

关键词 ：表面态密度, 晶粒, 电导率, 残压比

Abstract：

Direct-current ZnO varistor ceramic samples were prepared by traditional ceramic sintering process with B₂O₃, In₂O₃ and Al₂O₃multi-donor doping. The effects of B₂O₃ doping ratio (0.1%-0.4%, molar fraction) on the microstructure and electrical properties of direct-current ZnO varistor ceramics were investigated. The phase, morphology, composition and electrical properties of the samples were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and digital source meter. The results show that the co-doping of multi-donor dopants (Al₂O₃, In₂O₃ and B₂O₃) can significantly improve the comprehensive properties of direct-current ZnO varistor ceramics. Al³⁺ improves the conductivity of the samples and reduces the residual voltage ratio of the samples; In³⁺ restricts the growth of grains through pinning effect and improves the voltage gradient of the samples; the doping of B³⁺ improves the surface state density of the sample, increases the barrier height and effectively suppresses the increase in leakage current. When the doping amount of B₂O₃ is 0.3%, the comprehensive performance of the sample is the best: the voltage gradient is 486 V/mm, the leakage current density is 0.58 μA/cm², the nonlinear coefficient is 85, and the residual voltage ratio is 1.55.

Key words： surface state density grain conductivity residual voltage ratio

收稿日期: 2020-11-11 出版日期: 2022-08-16

中图分类号:

TM862

基金资助:国家自然科学基金资助项目(51762038)

通讯作者: 赵洪峰 E-mail: zhf_zhf@126.com

作者简介: 赵洪峰(1978—)，男，副教授，博士，研究方向为高电压绝缘材料，联系地址：新疆乌鲁木齐市天山区延安路1230号新疆大学南校区电气工程学院(830046)，E-mail: zhf_zhf@126.com

引用本文:

程宽, 赵洪峰, 周远翔. 多元施主掺杂对直流ZnO压敏陶瓷结构与电气性能的影响[J]. 材料工程, 2022, 50(8): 153-159.
Kuan CHENG, Hongfeng ZHAO, Yuanxiang ZHOU. Effect of multi-donor doping on structure and electrical properties of DC ZnO varistor ceramics. Journal of Materials Engineering, 2022, 50(8): 153-159.

链接本文:

http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2020.001042 或 http://jme.biam.ac.cn/CN/Y2022/V50/I8/153

Fig.1 不同B₂O₃掺杂浓度样品的X射线衍射图

Fig.2 不同B₂O₃掺杂浓度样品的SEM图像
(a)0.1%；(b)0.2%；(c)0.3%；(d)0.4%

Fig.3 掺杂0.3% B₂O₃浓度样品的能量色散X射线光谱图像
(a)测量路径；(b)元素强度

Fig.4 不同B₂O₃掺杂浓度样品的电场-电流密度(E-J)曲线

Table 1 不同B₂O₃掺杂浓度样品的微观结构，E-J和C-V特征参数

Fig.5 不同B₂O₃掺杂浓度对样品的泄漏电流和非线性系数的影响

Fig.6 不同B₂O₃掺杂浓度样品的C-V曲线

Fig.7 不同B₂O₃掺杂浓度样品的交流阻抗谱
(a)样品在不同频率下的阻抗；(b)放大后靠近零点处的阻抗

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