碳化硅陶瓷导热性能的研究进展

doi:10.11868/j.issn.1001-4381.2021.001040

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摘要

SiC陶瓷具有优异的力学性能、热学性能、抗热震性能、抗化学侵蚀性能和抗氧化性能，是热交换器设备的常用基体材料。由于原料、成型工艺、烧成工艺和烧结助剂等因素制约，SiC陶瓷含有较多气孔、晶界、杂质和缺陷，导致其常温热导率（≤270 W·m^-1·K^-1）低于碳化硅单晶材料（6H-SiC，490 W·m^-1·K^-1），且不同制备工艺下热导率存在较大差异。本文主要分析了温度、气孔、晶体结构和第二相对SiC陶瓷导热性能的影响，归纳了热压烧结法、放电等离子烧结法、无压烧结法、重结晶烧结法和反应烧结法制备高导热SiC陶瓷的特点，对优化烧结助剂种类及含量、高温热处理和添加高导热第二相等改善SiC陶瓷导热性能的主要措施进行阐述，并展望了未来高导热SiC陶瓷的研究方向，为未来制备低成本、高导热SiC质热交换器提供理论参考。

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	董博
	余超
	邓承继
	祝洪喜
	丁军
	唐慧

关键词 ： SiC陶瓷, 热导率, 声子散射, 晶界, 第二相, 烧结助剂, 热处理

Abstract：

SiC ceramics has been extensively used in heat exchangers because of their excellent mechanical properties, high thermal conductivity, and superior thermal shock, corrosion, and oxidation resistance. However, there is a wide variation in the thermal conductivity of SiC ceramics, depending on the raw materials, molding process, sintering process, and sintering additives. The thermal conductivity of SiC ceramics (≤ 270 W·m^-1·K^-1) is much lower than that of 6H-SiC single crystals (490 W·m^-1·K^-1) because of pores, grain boundaries, impurities, and defects in SiC ceramics. In this work, the important factors affecting the thermal conductivity of SiC ceramics were analyzed, including temperature, pore, crystal structure, and second phase. Further, the preparation processes of high conductivity SiC ceramics were systematically compared based on hot-pressed sintering, spark plasma sintering, pressureless sintering, recrystallization sintering, and reaction sintering. The improvement measures of thermal conductivity of SiC ceramics were summarized, including the optimization of the type and content of sintering aids, high-temperature annealing, and adding a high-thermal-conductivity second phase. Finally, the prospects and research directions of low-cost and high-thermal-conductivity SiC ceramics are proposed.

Key words： silicon carbide ceramic thermal conductivity phonon scattering grain boundary second phase sintering additive heat treatment

收稿日期: 2021-10-29 出版日期: 2023-01-16

中图分类号:

TQ174.75

基金资助:国家自然科学基金区域创新发展联合基金(U20A20239);湖北省自然科学基金面上项目(2020CFB692)

通讯作者: 余超 E-mail: chaoyu@wust.edu.cn

作者简介: 余超(1986-), 男, 副教授, 博士, 研究方向为耐火材料及高温陶瓷, 联系地址: 湖北省武汉市青山区和平大道947号武汉科技大学青山校区省部共建耐火材料与冶金国家重点实验室(430081), E-mail: chaoyu@wust.edu.cn

引用本文:

董博, 余超, 邓承继, 祝洪喜, 丁军, 唐慧. 碳化硅陶瓷导热性能的研究进展[J]. 材料工程, 2023, 51(1): 64-75.
Bo DONG, Chao YU, Chengji DENG, Hongxi ZHU, Jun DING, Hui TANG. Research progress in thermal conductivity of SiC ceramics. Journal of Materials Engineering, 2023, 51(1): 64-75.

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http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2021.001040 或 http://jme.biam.ac.cn/CN/Y2023/V51/I1/64

Fig.1 SiC质板翅式换热器示意图(a)及气流流向示意图(b)^[16]

Table 1 SiC陶瓷孔隙率及不同温度和取向时的热导率^[23]

Fig.2 含1% (a)和3% (b)GNPs时SiC复合材料的C-SFM的3D表征图^[45]

Fig.3 塑料模具(a)，石墨型芯(b)，去除型芯后SiC陶瓷(c)和表面磨平后SiC陶瓷(d)的宏观形貌^[48]

Fig.4 含散热片的散热器件^[59]

Table 2 不同制备工艺下SiC的热导率

Table 3 添加不同烧结助剂时SiC陶瓷的热学性能

Table 4 试样在高温热处理前后的热导率^[40]

Fig.5 室温下Si/SiC(a)和SiC/金刚石(b)界面处计算光谱热通量^[37]

Table 5 添加不同第二相时SiC陶瓷的常温热导率

Fig.6 不同错位角时试样热通量分布^[43]
(a)0°；(b)15°；(c)45°；(d)75°；(e)90°

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