氮掺杂导电碳化硅陶瓷研究进展

doi:10.11868/j.issn.1001-4381.2021.001052

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可电火花加工的导电碳化硅(SiC)陶瓷不仅可以克服传统高电阻率SiC陶瓷难加工的突出缺点，而且能够保留传统高电阻率SiC陶瓷的其他优异性能，在结构陶瓷领域取代传统的高电阻率SiC陶瓷具有突出优势。本文阐述了粉末烧结制备氮掺杂导电SiC陶瓷的原理，归纳总结分析了其粉末烧结制备方法、烧结助剂的种类及其所获得SiC陶瓷的热电和力学性能。同时，探讨了SiC陶瓷的电性能影响因素，为调控SiC陶瓷的电性能提供了参考依据。最后，指出了氮掺杂导电SiC陶瓷面临的主要挑战，在未来研究中，应聚焦于发展新烧结技术与烧结添加剂体系以及澄清电性能调控机制，为制备电阻率可控的高性能导电SiC陶瓷奠定技术基础。

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	杨建国
	沈伟健
	李华鑫
	贺艳明
	闾川阳
	郑文健
	马英鹤
	魏连峰

关键词 ：碳化硅, 导电陶瓷, 氮掺杂, 电性能, 力学性能

Abstract：

The electrically conductive silicon carbide (SiC) ceramics that can be machined by electrical discharge machining, can not only overcome the highlight shortcomings of traditional high resistivity-grade SiC ceramics in machinability, but also maintain its other excellent properties. It has outstanding advantages to replace traditional high resistivity-grade SiC ceramics in the field of structural ceramics. In this paper, the nitrogen doping principle of electrically conductive SiC ceramics was illustrated, and then the powder sintering methods, sintering additives, thermoelectric and mechanical properties were summarized. Meanwhile, in order to provide guidance for the control of electrical properties, the electrical properties-related factors were discussed. In the end, the main challenges of nitrogen-doped electrically conductive SiC ceramics were pointed out, and the future interests were suggested to focus on the development of new sintering technology and additive, as well as clarifying the control mechanism of electrical properties, thereby establishing the technical foundation for fabrication of high-performance conductive SiC ceramics with controllable electrical resistivity.

Key words： silicon carbide electrically conductive ceramics nitrogen doping electrical property mechanical property

收稿日期: 2021-11-02 出版日期: 2022-09-20

中图分类号:

TB321

基金资助:国家自然科学基金(52005445);国家自然科学基金(51975530);浙江省自然科学基金(LQ21E050018);国家磁约束核聚变能发展研究专项(2019YFE03100400)

通讯作者: 李华鑫,贺艳明 E-mail: hxli2019@zjut.edu.cn;heyanming@zjut.edu.cn

作者简介: 贺艳明(1984—)，男，副研究员，博士，研究方向：面向四代核电的新材料及异种材料连接、三代/四代核电材料高温力学行为评价(蠕变，疲劳等)、全固态锂离子电池界面构筑与内应力控制，联系地址：浙江省杭州市西湖区留和路288号浙江工业大学机械工程学院(310023)，E-mail: heyanming@zjut.edu.cn
李华鑫(1990—)，男，副研究员，博士，研究方向：金属、陶瓷结构材料的制备及其先进连接技术，联系地址：浙江省杭州市西湖区留和路288号浙江工业大学机械工程学院(310023)，E-mail: hxli2019@zjut.edu.cn

引用本文:

杨建国, 沈伟健, 李华鑫, 贺艳明, 闾川阳, 郑文健, 马英鹤, 魏连峰. 氮掺杂导电碳化硅陶瓷研究进展[J]. 材料工程, 2022, 50(9): 18-31.
Jianguo YANG, Weijian SHEN, Huaxin LI, Yanming HE, Chuanyang LYU, Wenjian ZHENG, Yinghe MA, Lianfeng WEI. Research progress in nitrogen-doped electrically conductive silicon carbide ceramics. Journal of Materials Engineering, 2022, 50(9): 18-31.

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http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2021.001052 或 http://jme.biam.ac.cn/CN/Y2022/V50/I9/18

Table 1 不同电阻率的CVD-SiC的性能参数^[12]

Fig.1 氮掺杂原理示意图
(a)3C-SiC晶体结构；(b)N掺杂的3C-SiC晶体结构

Fig.2 N掺杂导电SiC陶瓷制备过程示意图

Processing condition	Sintering additive	Polytype	Electrical resistivity/(Ω·cm)	Thermal conductivity/(W·m^-1·K^-1)	Relative density/%	Hardness/GPa	Fracture toughness/(MPa·m^1/2)	Flexural strength/MPa	Reference
PS，1950 ℃/6 h/N₂	5% Y₂O₃-Sc₂O₃+1.5% AlN	α and β	6.7× 10^-1-5.4	91.9-110.3	96.7-98.6	25.0-27.2	4.1-5.1	509.0-520.0	[24]
PS，1900-2050 ℃/2 h/N₂	10% Y₂O₃-AlN	β	1.9×10^-2-6.5×10¹		98.4-99.9				[25]
PS，1950 ℃/6 h/N₂	10% Y₂O₃-AlN+0-25% TiN	β	8.6×10^-4-8.2×10^-1		98.3-99.8	23.1-26.7	4.0-5.7	430.0-497.0	[26]
HP，1850 ℃/40 MPa/2 h/N₂	2% Y₂O₃-Sc₂O₃+10%-35% Si₃N₄	β	9.0×10^-2-1.4	57.0-83.0	95.7-96.1	19.0-20.5	6.8-7.1	550.0-719.0	[27]
HP，2000 ℃/40 MPa/2 h/N₂	2% Y₂O₃-Re₂O₃(Re= Sm, Gd, Lu)	β	1.5×10^-2-5.6×10^-2		97.2-99.9				[28]
HP，2050 ℃/20 MPa/6 h/N₂	*1%-6.3% AlN-Y₂O₃	β	7.0×10^-3-4.0×10^-2		93.2-93.4				[29]
HP，2000 ℃/40 MPa/3 h/N₂	2% Y₂O₃-Sc₂O₃+0-20% TiN	β	3.5×10^-4-1.0×10^-1		98.9-99.8				[30]
HP，2050 ℃/40 MPa/6 h/N₂	*3.14%-12.58% Y₂O₃	β	7.0×10^-3-7.5×10^-2		92.3-98.7				[31]
HP，2000 ℃/40 MPa/3 h/N₂	2% Y₂O₃-Re₂O₃(Re= Sm, Gd, Lu)+4% TiN	β	2.2×10^-2-7.0×10^-2		99.9	23.5-25.0	4.4-4.6	697.0-786.0	[32]
HP，2000 ℃/40 MPa/(1-12) h/N₂	3% Gd₂O₃-Y₂O₃	β	8.9×10^-3-5.2×10^-2		97.9-99.9				[17]
HP，2000 ℃/40 MPa/3 h/N₂	2% Y₂O₃+0-35% BN	β	3.7×10^-2-6.8	55.1-188.6	96.3-99.7		3.4-6.0	310.0-586.0	[33]
HP，2000 ℃/40 MPa/3 h/N₂	2% Y₂O₃-Sc₂O₃+0-35% ZrN	β	4.4×10^-4-2.6×10^-2	81.3-199.6	98.5-99.5				[34]
HP，2050 ℃/40 MPa/6 h/N₂	*3.1%-33.8% Y(NO₃)₃·4H₂O	β	3.0×10^-3-1.0×10^-1		98.4-99.9				[35]
HP，2000 ℃/40 MPa/6 h/N₂	*2% Y₂O₃+0-20% PCS	β	1.8×10^-2-7.8×10^-2		98.9-99.7	26.5-30.0	4.5-5.2	484.0-678.0	[36]
HP，2050 ℃/40 MPa/6 h/N₂	*0.5% AlN-Re₂O₃(Re= Y, Nd, Lu)	β	4.3×10^-2-1.5×10^-1		95.1-99.9				[37]
HP，2050 ℃/40 MPa/6 h/N₂	*1.108%-1.887% Sc₂O₃-Y₂O₃	β	4.3×10^-3-1.9×10^-1		99.9				[38]
HP，1900 ℃/40 MPa/6 h/N₂	*1.186%-1.841% Al₂O₃-Y₂O₃	β	8.3×10^-1-8.3		99.9				[38]
HP，2000 ℃/40 MPa/3 h/N₂	2% Y₂O₃+2%-4% TiN	β	2.4×10^-3-1.8×10^-4		99.9				[39]
HP，2000 ℃/40 MPa/3 h/N₂	2% Y₂O₃+1% ReN(Re= B, Al, Ti)	β	1.6×10^-2-3.8×10¹	99.2-210.8	99.1-99.9				[40]
HP，2050 ℃/20 MPa/12 h/N₂	*1% AlN-Re₂O₃(Re= Sc, Nd, Eu, Gd, Ho, Er, Lu)	β	1.5×10^-2-2.9		95.1-97.8				[41]
HP，2000 ℃/40 MPa/3 h/N₂	2% Y₂O₃+0-35% BN	β	8.1×10^-3-8.3×10^-1	63.0-182.9	96.7-97.6				[42]
SPS，1950 ℃/60 MPa/10 min/N₂	*0-15.366% Y(NO₃)₃·4H₂O	β	1.5×10^-2-9.7×10^-2		73.6-86.5				[43]

Table 2 粉末烧结制备的导电SiC陶瓷的电学、热学性能和力学性能

Fig.3 影响SiC陶瓷电性能因素汇总

Fig.4 不同SiC晶型初始粉末制备的SiC电阻率随烧结助剂含量的变化
(a)α-SiC；(b)β-SiC

Fig.5 晶粒尺寸对SiC陶瓷电阻率的影响

Fig.6 孔隙率对SiC陶瓷电阻率的影响

Table 3 不同SiC陶瓷的N掺杂量、载流子浓度、载流子迁移率和电阻率

1	KOYANAGI T , KATOH Y , HINOKI T , et al. Progress in development of SiC-based joints resistant to neutron irradiation[J]. Journal of the European Ceramic Society, 2020, 40 (4): 1023- 1034. doi: 10.1016/j.jeurceramsoc.2019.10.055
2	洪智亮, 张巧君, 李开元, 等. SiC/SiC复合材料在高温空气中的氧化行为[J]. 材料工程, 2021, 49 (5): 144- 150.
2	HONG Z L , ZHANG Q J , LI K Y , et al. Oxidation behavior of SiC/SiC composites in air at high temperature[J]. Journal of Materials Engineering, 2021, 49 (5): 144- 150.
3	KATOH Y , SNEAD L L . Silicon carbide and its composites for nuclear applications-historical overview[J]. Journal of Nuclear Materials, 2019, 526, 151849. doi: 10.1016/j.jnucmat.2019.151849
4	刘巧沐, 黄顺洲, 何爱杰. 碳化硅陶瓷基复合材料在航空发动机上的应用需求及挑战[J]. 材料工程, 2019, 47 (2): 1- 10.
4	LIU Q M , HUANG S Z , HE A J . Application requirements and challenges of CMC-SiC composites on aero-engine[J]. Journal of Materials Engineering, 2019, 47 (2): 1- 10.
5	LV X , YE F , CHENG L , et al. Fabrication of SiC whisker-reinforced SiC ceramic matrix composites based on 3D printing and chemical vapor infiltration technology[J]. Journal of the European Ceramic Society, 2019, 39 (11): 3380- 3386. doi: 10.1016/j.jeurceramsoc.2019.04.043
6	LI M , ZHOU X , YANG H , et al. The critical issues of SiC materials for future nuclear systems[J]. Scripta Materialia, 2018, 143, 149- 153. doi: 10.1016/j.scriptamat.2017.03.001
7	HUANG Y , JIANG D , ZHANG X , et al. Enhancing toughness and strength of SiC ceramics with reduced graphene oxide by HP sintering[J]. Journal of the European Ceramic Society, 2018, 38 (13): 4329- 4337. doi: 10.1016/j.jeurceramsoc.2018.05.033
8	YUE X , LI Q , YANG X . Influence of thermal stress on material removal of C_f_SiC composite in EDM[J]. Ceramics International, 2020, 46 (6): 7998- 8009. doi: 10.1016/j.ceramint.2019.12.022
9	RAKSHIT R , DAS A K . A review on cutting of industrial ceramic materials[J]. Precision Engineering, 2019, 59, 90- 109. doi: 10.1016/j.precisioneng.2019.05.009
10	GUO Y , FENG Y , WANG L , et al. Experimental investigation of EDM parameters for ZrB₂-SiC ceramics machining[J]. Procedia CIRP, 2018, 68, 46- 51. doi: 10.1016/j.procir.2017.12.020
11	ZHANG Z , ZHANG Y , LIN L , et al. Study on productivity and aerosol emissions of magnetic field-assisted EDM process of SiC_p/Al composite with high volume fractions[J]. Journal of Cleaner Production, 2021, 292, 126018. doi: 10.1016/j.jclepro.2021.126018
12	CoorsTek Inc. Advanced silicon carbide for critical components[EB/OL]. 2017. https://www.coorstek.com/media/2602/sic-manufacturing-01024.pdf.
13	陈军军. SiC基复相导电陶瓷的制备与性能研究[D]. 上海: 中国科学院上海硅酸盐研究所, 2018.
13	CHEN J J. Preparation and properties of SiC based electrical conductive ceramics[D]. Shanghai: Shanghai Institute of Ceramics, Chinese Academy of Sciences, 2018.
14	刘恩科, 朱秉升, 罗晋生. 半导体物理学[M]. 北京: 电子工业出版社, 2017: 37- 42.
14	LIU E K , ZHU B S , LUO J S . The physics of semiconductors[M]. Beijing: Publishing House of Electronics Industry, 2017: 37- 42.
15	HUA A , WEI F , PAN D , et al. Wide-band microwave absorption by in situ tailoring morphology and optimized N-doping in nano-SiC[J]. Applied Physics Letters, 2017, 111 (22): 223105. doi: 10.1063/1.5003983
16	HU T , FANG Q , ZHANG X , et al. Enhanced n-doping of epitaxial graphene on SiC by bismuth[J]. Applied Physics Letters, 2018, 113 (1): 011602. doi: 10.1063/1.5029541
17	KIM Y W , CHO T Y , KIM K J . Effect of grain growth on electrical properties of silicon carbide ceramics sintered with gadolinia and yttria[J]. Journal of the European Ceramic Society, 2015, 35 (15): 4137- 4142. doi: 10.1016/j.jeurceramsoc.2015.08.006
18	ZHAO T T , GU H , WANG X H , et al. Revealing correlation of core-rim structures, defects and stacking-faults in SiC ceramics by integrated scanning electron microscopy[J]. Journal of the European Ceramic Society, 2021, 41 (1): 204- 212. doi: 10.1016/j.jeurceramsoc.2020.09.019
19	RAJU K , YOON D H . Sintering additives for SiC based on the reactivity: a review[J]. Ceramics International, 2016, 42 (16): 17947- 17962. doi: 10.1016/j.ceramint.2016.09.022
20	许顺祥, 寇华敏, 郭亚平, 等. 纳米陶瓷烧结技术研究进展与展望[J]. 硅酸盐学报, 2019, 47 (12): 1768- 1775.
20	XU S X , KOU H M , GUO Y P , et al. Research progress and prospect of sintering techniques for nanoceramics[J]. Journal of the Chinese Ceramic Society, 2019, 47 (12): 1768- 1775.
21	杨路, 姜淑文, 王志强, 等. 特种陶瓷烧结致密化工艺研究进展[J]. 材料导报, 2014, 28 (4): 45- 49.
21	YANG L , JIANG S W , WANG Z Q , et al. Progress in sintering densification process of special ceramics[J]. Materials Review, 2014, 28 (4): 45- 49.
22	HU Z Y , ZHANG Z H , CHENG X W , et al. A review of multi-physical fields induced phenomena and effects in spark plasma sintering: fundamentals and applications[J]. Materials & Design, 2020, 191, 108662.
23	付振东, 赵健, 戴叶婧, 等. 碳化硅陶瓷烧结助剂的作用机制与研究进展[J]. 材料导报, 2021, 35 (1): 01077- 01081.
23	FU Z D , ZHAO J , DAI Y J , et al. Sintering aids for silicon carbide ceramics: action mechanisms and research progress[J]. Materials Reports, 2021, 35 (1): 01077- 01081.
24	CHO T Y , KIM Y W , KIM K J . Thermal, electrical, and mechanical properties of pressureless sintered silicon carbide ceramics with yttria-scandia-aluminum nitride[J]. Journal of the European Ceramic Society, 2016, 36 (11): 2659- 2665. doi: 10.1016/j.jeurceramsoc.2016.04.014
25	KIM Y H , KIM Y W , KIM K J . Electrically conductive SiC ceramics processed by pressureless sintering[J]. International Journal of Applied Ceramic Technology, 2018, 16 (2): 843- 849.
26	CHO T Y , MALIK R , KIM Y W , et al. Electrical and mechanical properties of pressureless sintered SiC-Ti₂CN composites[J]. Journal of the European Ceramic Society, 2018, 38 (9): 3064- 3072. doi: 10.1016/j.jeurceramsoc.2018.03.040
27	YEOM H J , KIM Y W , KIM K J . Electrical, thermal and mechanical properties of silicon carbide-silicon nitride composites sintered with yttria and scandia[J]. Journal of the European Ceramic Society, 2015, 35 (1): 77- 86. doi: 10.1016/j.jeurceramsoc.2014.08.011
28	JANG S H , KIM Y W , KIM K J , et al. Effects of Y₂O₃-RE₂O₃(RE = Sm, Gd, Lu)additives on electrical and thermal properties of silicon carbide ceramics[J]. Journal of the American Ceramic Society, 2016, 99 (1): 265- 272. doi: 10.1111/jace.13958
29	KIM K J , LIM K Y , KIM Y W . Control of electrical resistivity in silicon carbide ceramics sintered with aluminum nitride and yttria[J]. Journal of the American Ceramic Society, 2013, 96 (11): 3463- 3469. doi: 10.1111/jace.12498
30	KIM K J , KIM K M , KIM Y W . Highly conductive SiC ceramics containing Ti₂CN[J]. Journal of the European Ceramic Society, 2014, 34 (5): 1149- 1154. doi: 10.1016/j.jeurceramsoc.2013.11.001
31	KIM K J , LIM K Y , KIM Y W . Influence of Y₂O₃ addition on electrical properties of β-SiC ceramics sintered in nitrogen atmosphere[J]. Journal of the European Ceramic Society, 2012, 32 (16): 4401- 4406. doi: 10.1016/j.jeurceramsoc.2012.07.001
32	JANG S H , KIM Y W , KIM K J . Effects of Y₂O₃-RE₂O₃(RE = Sm, Gd, Lu)additives on electrical and mechanical properties of SiC ceramics containing Ti₂CN[J]. Journal of the European Ceramic Society, 2016, 36 (12): 2997- 3003. doi: 10.1016/j.jeurceramsoc.2015.09.042
33	SEO Y K , KIM Y W , KIM K J , et al. Electrically conductive SiC-BN composites[J]. Journal of the European Ceramic Society, 2016, 36 (16): 3879- 3887. doi: 10.1016/j.jeurceramsoc.2016.06.040
34	JANG S H , KIM Y W , KIM K J . Electrical and thermal properties of SiC-Zr₂CN composites sintered with Y₂O₃-Sc₂O₃ additives[J]. Journal of the European Ceramic Society, 2017, 37 (2): 477- 484. doi: 10.1016/j.jeurceramsoc.2016.09.001
35	KIM K J , LIM K Y , KIM Y W . Effective nitrogen doping for fabricating highly conductive β-SiC ceramics[J]. Journal of the American Ceramic Society, 2011, 94 (10): 3216- 3219. doi: 10.1111/j.1551-2916.2011.04799.x
36	LIM K Y , KIM Y W , KIM K J . Mechanical properties of electrically conductive silicon carbide ceramics[J]. Ceramics International, 2014, 40 (7): 10577- 10582. doi: 10.1016/j.ceramint.2014.03.036
37	LIM K Y , KIM Y W , KIM K J . Electrical properties of SiC ceramics sintered with 0.5wt% AlN-RE₂O₃(RE=Y, Nd, Lu)[J]. Ceramics International, 2014, 40 (6): 8885- 8890. doi: 10.1016/j.ceramint.2013.12.157
38	KIM K J , MALIK R , PARK J , et al. Effects of M₂O₃-Y₂O₃(M= Sc and Al)additives on electrical conductivity of hot-pressed SiC ceramics[J]. Ceramics International, 2020, 46 (4): 5454- 5458. doi: 10.1016/j.ceramint.2019.10.194
39	KIM K J , LIM K Y , KIM Y W . Electrically and thermally conductive SiC ceramics[J]. Journal of the Ceramic Society of Japan, 2014, 122 (1431): 963- 966. doi: 10.2109/jcersj2.122.963
40	KIM K J , LIM K Y , KIM Y W . Electrical and thermal properties of SiC ceramics sintered with yttria and nitrides[J]. Journal of the American Ceramic Society, 2014, 97 (9): 2943- 2949. doi: 10.1111/jace.13031
41	KIM Y W , LIM K Y , KIM K J . Electrical resistivity of silicon carbide ceramics sintered with 1 wt% aluminum nitride and rare earth oxide[J]. Journal of the European Ceramic Society, 2012, 32 (16): 4427- 4434. doi: 10.1016/j.jeurceramsoc.2012.07.021
42	MALIK R , KIM H M , KIM Y W , et al. Grain-growth-induced high electrical conductivity in SiC-BN composites[J]. Ceramics International, 2018, 44 (14): 16394- 16399. doi: 10.1016/j.ceramint.2018.06.049
43	KIM K J , JANG S H , KIM Y W , et al. Conductive SiC ceramics fabricated by spark plasma sintering[J]. Ceramics International, 2016, 42 (15): 17892- 17896. doi: 10.1016/j.ceramint.2016.07.126
44	ALPER A M . Phase diagrams in advanced ceramics[M]. California: Academic Press, 1995: 13- 14.
45	KIM Y W , KIM K J , KIM H C , et al. Electrodischarge-machinable silicon carbide ceramics sintered with yttrium nitrate[J]. Journal of the American Ceramic Society, 2011, 94 (4): 991- 993. doi: 10.1111/j.1551-2916.2011.04419.x
46	JIN H , CAO M , ZHOU W , et al. Microwave synthesis of Al-doped SiC powders and study of their dielectric properties[J]. Materials Research Bulletin, 2010, 45 (2): 247- 250. doi: 10.1016/j.materresbull.2009.09.015
47	YANG Z , LI Z , NING T , et al. Microwave dielectric properties of B and N co-doped SiC nanopowders prepared by combustion synthesis[J]. Journal of Alloys and Compounds, 2019, 777, 1039- 1043. doi: 10.1016/j.jallcom.2018.11.067
48	LU X , DONG C , GUO X , et al. Effect of B, Al, Ga doping on the electronic structure and optical property of 4H-SiC system by the first principles calculation[J]. Modern Physics Letters B, 2021, 35 (5): 2150091. doi: 10.1142/S0217984921500913
49	CASAMENTO J , WRIGHT J , CHAUDHURI R , et al. Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN[J]. Applied Physics Letters, 2019, 115 (17): 172101. doi: 10.1063/1.5121329
50	CHENG X , WANG L , GAO F , et al. The N and P co-doping-induced giant negative piezoresistance behaviors of SiC nanowires[J]. Journal of Materials Chemistry C, 2019, 7 (11): 3181- 3189. doi: 10.1039/C8TC06623J
51	KOH D , BANERJEE S K , LOCKE C , et al. Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and Ⅲ-Ⅴ nitrides[J]. Journal of Vacuum Science & Technology B, 2019, 37 (4): 041206.
52	MATSUDA Y , KING S W , DAUSKARDT R H . Tailored amorphous silicon carbide barrier dielectrics by nitrogen and oxygen doping[J]. Thin Solid Films, 2013, 531, 552- 558. doi: 10.1016/j.tsf.2012.11.141
53	MURATA K , TAWARA T , YANG A , et al. Wide-ranging control of carrier lifetimes in n-type 4H-SiC epilayer by intentional vanadium doping[J]. Journal of Applied Physics, 2019, 126 (4): 045711. doi: 10.1063/1.5098101
54	RAJPOOT S , HA J H , KIM Y W . Effects of initial particle size on mechanical, thermal, and electrical properties of porous SiC ceramics[J]. Ceramics International, 2021, 47 (6): 8668- 8676. doi: 10.1016/j.ceramint.2020.11.238
55	KULTAYEVA S , KIM Y W , SONG I H . Effects of dopants on electrical, thermal, and mechanical properties of porous SiC ceramics[J]. Journal of the European Ceramic Society, 2021, 41 (7): 4006- 4015. doi: 10.1016/j.jeurceramsoc.2021.01.049
56	LIM K Y , KIM Y W , NISHIMURA T , et al. High temperature strength of silicon carbide sintered with 1 wt% aluminum nitride and lutetium oxide[J]. Journal of the European Ceramic Society, 2013, 33 (2): 345- 350. doi: 10.1016/j.jeurceramsoc.2012.09.005
57	KIM Y W , JANG S H , NISHIMURA T , et al. Microstructure and high-temperature strength of silicon carbide with 2000 ppm yttria[J]. Journal of the European Ceramic Society, 2017, 37 (15): 4449- 4455. doi: 10.1016/j.jeurceramsoc.2017.07.002
58	KIM K J , EOM J H , KIM Y W , et al. Highly resistive SiC ceramics sintered with Al₂O₃-AIN-Y₂O₃ additions[J]. Ceramics International, 2017, 43 (6): 5343- 5346. doi: 10.1016/j.ceramint.2017.01.058
59	KIM K J , LIM K Y , KIM Y W , et al. Electrical resistivity of α-SiC ceramics sintered with Al₂O₃ or AlN additives[J]. Journal of the European Ceramic Society, 2014, 34 (7): 1695- 1701. doi: 10.1016/j.jeurceramsoc.2014.01.004
60	LIANG H , YAO X , DENG H , et al. High electrical resistivity of spark plasma sintered SiC ceramics with Al₂O₃ and Er₂O₃ as sintering additives[J]. Journal of the European Ceramic Society, 2015, 35 (1): 399- 403. doi: 10.1016/j.jeurceramsoc.2014.08.025
61	KIM Y W , CHUN Y S , NISHIMURA T , et al. High-temperature strength of silicon carbide ceramics sintered with rare-earth oxide and aluminum nitride[J]. Acta Materialia, 2007, 55 (2): 727- 736. doi: 10.1016/j.actamat.2006.08.059
62	CAN A , MCLACHLAN D S , SAUTI G , et al. Relationships between microstructure and electrical properties of liquid-phase sintered silicon carbide materials using impedance spectroscopy[J]. Journal of the European Ceramic Society, 2007, 27 (2/3): 1361- 1363.
63	SIEGELIN F , KLEEBE H J , SIGL L S . Interface characteristics affecting electrical properties of Y-doped SiC[J]. Journal of Materials Research, 2003, 18 (11): 2608- 2617. doi: 10.1557/JMR.2003.0365
64	CHEN D , SIXTA M E , ZHANG X F , et al. Role of the grain-boundary phase on the elevated-temperature strength, toughness, fatigue and creep resistance of silicon carbide sintered with Al, B and C[J]. Acta Materialia, 2000, 48 (18/19): 4599- 4608.
65	LIM K Y , KIM Y W , KIM K J , et al. Effect of in situ-synthesized nano-size SiC addition on density and electrical resistivity of liquid-phase sintered silicon carbide ceramics[J]. Journal of the Ceramic Society of Japan, 2011, 119 (1396): 965- 967. doi: 10.2109/jcersj2.119.965
66	LIM K Y , KIM Y W , KIM K J . Influence of powder characteristics on the electrical resistivity of SiC ceramics[J]. Journal of the Ceramic Society of Japan, 2012, 120 (1402): 251- 255. doi: 10.2109/jcersj2.120.251
67	ZHAN G D , MITOMO M , XIE R J , et al. Thermal and electrical properties in plasma-activation-sintered silicon carbide with rare-earth-oxide additives[J]. Journal of the American Ceramic Society, 2001, 84 (10): 2448- 2450.
68	KOUMOTO K , SHIMOHIGOSHI M , TAKEDA S , et al. Thermoelectric energy conversion by porous SiC ceramics[J]. Journal of Materials Science Letters, 1987, 6 (12): 1453- 1455. doi: 10.1007/BF01689320
69	KIM K J , KIM Y W , LIM K Y , et al. Electrical and thermal properties of SiC-AlN ceramics without sintering additives[J]. Journal of the European Ceramic Society, 2015, 35 (10): 2715- 2721. doi: 10.1016/j.jeurceramsoc.2015.04.010
70	KHODAEI M , YAGHOBIZADEH O , EHSANI N , et al. The effect of TiO₂ additive on the electrical resistivity and mechanical properties of pressureless sintered SiC ceramics with Al₂O₃-Y₂O₃[J]. International Journal of Refractory Metals and Hard Materials, 2018, 76, 141- 148. doi: 10.1016/j.ijrmhm.2018.06.005
71	KIM Y W , KIM Y H , KIM K J . Electrical properties of liquid-phase sintered silicon carbide ceramics: a review[J]. Critical Reviews in Solid State and Materials Sciences, 2019, 45 (1): 66- 84.
72	IWATA H P , LINDEFELT U , ÖBERG S , et al. Stacking faults in silicon carbide[J]. Physica B, 2003, 340/342, 165- 170. doi: 10.1016/j.physb.2003.09.045
73	KIM Y W , MITOMO M , HIROTSURU H . Microstructural development of silicon carbide containing large seed grains[J]. Journal of the American Ceramic Society, 1997, 80 (1): 99- 105. doi: 10.1111/j.1151-2916.1997.tb02796.x
74	KIM Y W , MITOMO M , EMOTO H , et al. Effect of initial α-phase content on microstructure and mechanical properties of sintered silicon carbide[J]. Journal of the American Ceramic Society, 1998, 81 (12): 3136- 3140. doi: 10.1111/j.1151-2916.1998.tb02748.x
75	NADER M , ALDINGER F , HOFFMANN M J . Influence of the α/β-SiC phase transformation on microstructural development and mechanical properties of liquid phase sintered silicon carbide[J]. Journal of Materials Science, 1999, 34 (6): 1197- 1204. doi: 10.1023/A:1004552704872
76	CHO T Y , KIM Y W . Effect of grain growth on the thermal conductivity of liquid-phase sintered silicon carbide ceramics[J]. Journal of the European Ceramic Society, 2017, 37 (11): 3475- 3481. doi: 10.1016/j.jeurceramsoc.2017.04.050
77	ZENG H , WU Y , ZHANG J , et al. Grain size-dependent electrical resistivity of bulk nanocrystalline Gd metals[J]. Progress in Natural Science: Materials International, 2013, 23 (1): 18- 22. doi: 10.1016/j.pnsc.2013.01.003
78	ABBAS S F , SEO S J , PARK K T , et al. Effect of grain size on the electrical conductivity of copper-iron alloys[J]. Journal of Alloys and Compounds, 2017, 720, 8- 16. doi: 10.1016/j.jallcom.2017.05.244
79	DURKAN C , WELLAND M E . Size effects in the electrical resistivity of polycrystalline nanowires[J]. Physical Review B, 2000, 61 (20): 14215- 14218. doi: 10.1103/PhysRevB.61.14215
80	CHEN S , TSENG K K , TONG Y , et al. Grain growth and Hall-Petch relationship in a refractory HfNbTaZrTi high-entropy alloy[J]. Journal of Alloys and Compounds, 2019, 795, 19- 26. doi: 10.1016/j.jallcom.2019.04.291
81	LI Y , YIN J , WU H , et al. Microstructure, thermal conductivity, and electrical properties of in situ pressureless densified SiC-BN composites[J]. Journal of the American Ceramic Society, 2015, 98 (3): 879- 887. doi: 10.1111/jace.13376
82	KIM K J , LIM K Y , KIM Y W , et al. Temperature dependence of electrical resistivity(4-300 K)in aluminum- and boron-doped SiC ceramics[J]. Journal of the American Ceramic Society, 2013, 96 (8): 2525- 2530. doi: 10.1111/jace.12351
83	MIZUSAKI J , WARAGAI K , TSUCHIYA S , et al. Simple mathematical model for the electrical conductivity of highly porous ceramics[J]. Journal of the American Ceramic Society, 1996, 79 (1): 109- 113. doi: 10.1111/j.1151-2916.1996.tb07887.x
84	MCLACHLAN D S , BLASZKIEWICZ M , NEWNHAM R E . Electrical resistivity of composites[J]. Journal of the American Ceramic Society, 1990, 73 (8): 2187- 2203. doi: 10.1111/j.1151-2916.1990.tb07576.x
85	LUX F . Models proposed to explain the electrical conductivity of mixtures made of conductive and insulating materials[J]. Journal of Materials Science, 1993, 28 (2): 285- 301. doi: 10.1007/BF00357799
86	CAI K F , LIU J , NAN C W , et al. Effect of porosity on the thermal-electric properties of Al-doped SiC ceramics[J]. Journal of Materials Science Letters, 1997, 16 (22): 1876- 1878. doi: 10.1023/A:1018557827330
87	IHLE J , MARTIN H P , HERRMANN M , et al. The influence of porosity on the electrical properties of liquid-phase sintered silicon carbide[J]. International Journal of Materials Research, 2006, 97 (5): 649- 656. doi: 10.3139/146.101285
88	KIM G D , KIM Y W , SONG I H , et al. Effects of carbon and silicon on electrical, thermal, and mechanical properties of porous silicon carbide ceramics[J]. Ceramics International, 2020, 46 (10): 15594- 15603. doi: 10.1016/j.ceramint.2020.03.106
89	KULTAYEVA S , HA J H , MALIK R , et al. Effects of porosity on electrical and thermal conductivities of porous SiC ceramics[J]. Journal of the European Ceramic Society, 2020, 40 (4): 996- 1004. doi: 10.1016/j.jeurceramsoc.2019.11.045
90	RAJPOOT S , HA J H , KIM Y W , et al. Electrical, thermal, and mechanical properties of porous SiC-nitride composites[J]. Journal of the European Ceramic Society, 2020, 40 (12): 3851- 3862. doi: 10.1016/j.jeurceramsoc.2020.04.018

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