Research Status and Development of Metallurgical Method for Solar Grade Silicon (SOG-Si)
TAN Yi1,2, GUO Xiao-liang1,2, SHI Shuang1,2, DONG Wei1,2, JIANG Da-chuan1,2, LI Jia-yan1,2
1. School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, Liaoning, China; 2. Key Laboratory for Solar Energy Photovoltaic System of Liaoning Province, Dalian University of Technology, Dalian 116024, Liaoning, China
Abstract：Purification polycrystalline silicon by metallurgical method is the only way for our country to escape the dependency of silicon feedstock, and to develop low-cast and environmental friendly process for SOG-Si. Since its emergence, metallurgical method has undergone three research surges. The third development is under the leading and promotion of our country's research and industry workers, obtaining considerable useful scientific theory and practical experience. In this paper, from the definition of metallurgical method, the basic theories of metallurgical method, including saturated vapor pressure principle, segregation mechanism and differences in mechanism of oxidation, are analyzed in detail; moreover, technologies and their progress derived from the mechanisms are presented. At the end, the trend of metallurgical method is forecasted.
谭毅, 郭校亮, 石爽, 董伟, 姜大川, 李佳艳. 冶金法制备太阳能级多晶硅研究现状及发展趋势[J]. 材料工程, 2013, 0(3): 90-96.
TAN Yi, GUO Xiao-liang, SHI Shuang, DONG Wei, JIANG Da-chuan, LI Jia-yan. Research Status and Development of Metallurgical Method for Solar Grade Silicon (SOG-Si). Journal of Materials Engineering, 2013, 0(3): 90-96.
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