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2222材料工程  2018, Vol. 46 Issue (8): 78-83    DOI: 10.11868/j.issn.1001-4381.2017.000257
  研究论文 本期目录 | 过刊浏览 | 高级检索 |
Eu2O3掺杂量及烧结温度对氧化铝基微波陶瓷性能的影响
亢静锐, 董桂霞(), 吕易楠, 李雷, 韩伟丹, 张茜
华北理工大学 材料科学与工程学院 河北省无机非金属材料重点实验室, 河北 唐山 063210
Influences of Eu2O3 Doping Amount and Sintering Temperature on Properties of Al2O3-based Microwave Ceramic Materials
Jing-rui KANG, Gui-xia DONG(), Yi-nan LYU, Lei LI, Wei-dan HAN, Xi ZHANG
Hebei Provincial Key Laboratory of Inorganic Nonmetallic Materials, College of Materials Science and Engineering, North China University of Science and Technology, Tangshan 063210, Hebei, China
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摘要 

选用MgO-CuO-TiO2-Eu2O3添加剂作为氧化铝陶瓷的烧结助剂,在空气气氛下经过常压烧结制备Al2O3陶瓷。采用XRD,SEM及EDS等方法研究Eu2O3掺杂量以及烧结温度对Al2O3基微波陶瓷样品物相组成,微观结构和介电性能的影响。结果表明:添加Eu2O3的Al2O3陶瓷中,均存在Al2Eu2O9次晶相,且随着Eu2O3含量的增加,Al2Eu2O9相增加;随着Eu2O3添加量的增加,Al2O3陶瓷试样致密度先增加后降低;随着烧结温度的增加,Al2O3陶瓷的介电常数和品质因数Q·f值先增加后降低。烧结温度为1450℃,Eu2O3添加量为0.25%(质量分数)时,烧结体的相对密度达到最大值98.21%,且Al2O3陶瓷的介电性能较好:介电常数为10.05,品质因数Q·f为37984GHz。

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亢静锐
董桂霞
吕易楠
李雷
韩伟丹
张茜
关键词 氧化铝陶瓷Eu2O3掺杂致密度介电性能    
Abstract

A kind of alumina ceramic was prepared by atmospheric pressure sintering under air atmosphere using MgO-CuO-TiO2-Eu2O3 as sintering additive. The effect of Eu2O3 doping amount and sintering temperature on the phase composition, microstructure as well as dielectric properties of Al2O3-based microwave ceramic samples was studied by XRD, SEM and EDS. The results show that the Al2Eu2O9 secondary crystalline phase is present in all Al2O3 ceramics with Eu2O3 addition, and the Al2Eu2O9 phase is enhanced with the increase of Eu2O3 content. With higher Eu2O3 content, the density of Al2O3 ceramics increases first and then decreases. As sintering temperature increases, the dielectric constant and quality factor Q·f of Al2O3 ceramics increase first and then decrease. When the sintering temperature rises up to 1450℃ and the content of Eu2O3 is 0.25%(mass fraction), the relative density of the sintered body reaches to the maximum of 98.21%, and the dielectric properties of the Al2O3 ceramics are superior with the dielectric constant 10.05 and the quality factor Q·f 37984GHz.

Key wordsalumina ceramic    Eu2O3 doping    density    dielectric property
收稿日期: 2017-03-07      出版日期: 2018-08-17
中图分类号:  TQ174  
基金资助:国家国际科技合作计划(2014DFR50570)
通讯作者: 董桂霞     E-mail: dgxdgx01@163.com
作者简介: 董桂霞(1966-), 女, 高级工程师, 博士, 现从事功能陶瓷研究, 联系地址:河北省唐山市曹妃甸新城渤海大道21号华北理工大学材料科学与工程学院(063210), E-mail:dgxdgx01@163.com
引用本文:   
亢静锐, 董桂霞, 吕易楠, 李雷, 韩伟丹, 张茜. Eu2O3掺杂量及烧结温度对氧化铝基微波陶瓷性能的影响[J]. 材料工程, 2018, 46(8): 78-83.
Jing-rui KANG, Gui-xia DONG, Yi-nan LYU, Lei LI, Wei-dan HAN, Xi ZHANG. Influences of Eu2O3 Doping Amount and Sintering Temperature on Properties of Al2O3-based Microwave Ceramic Materials. Journal of Materials Engineering, 2018, 46(8): 78-83.
链接本文:  
http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2017.000257      或      http://jme.biam.ac.cn/CN/Y2018/V46/I8/78
Fig.1  Al2O3基陶瓷的相对密度与烧结温度及Eu2O3添加量之间的关系
Fig.2  不同Eu2O3添加量的Al2O3基陶瓷在1450℃烧结4h的XRD图谱
Fig.3  在1450℃烧结4h不同Eu2O3添加量的Al2O3陶瓷的SEM图及相应点1和2的EDS谱图
(a)0.05%;(b)0.10%;(c)0.15%;(d)0.20%;(e)0.25%;(f)0.50%;(g)图 3(e)中1点能谱图;(h)图 3(e)中2点能谱图
Fig.4  不同温度下烧结4h的Al2O3基陶瓷的SEM图
(a)1400℃;(b)1450℃;(c)1480℃;(d)1500℃;(e)1550℃
Fig.5  不同温度下烧结4h的Al2O3陶瓷的介电性能
T/℃ Center frequency/GHz ξ (Q·f)/GHz
1400 9.66 9.73 14732
1450 9.52 10.05 37984
1480 9.85 9.97 33946
1500 9.73 9.84 19672
1550 9.67 9.82 15063
Table 1  不同温度下烧结4h Al2O3陶瓷样品的中心频率及介电性能
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