Abstract：GaP films have been prepared by RF magnetron sputtering of single crystalline gallium phosphide. The deposition rate, composition, structure, hardness and optical properties of GaP films have been also investigated. The results show that the atom ratio of gallium to phosphor is near 1:1 and the deposited films are amorphous compound GaP; Anti-reflective and protective films consisted by DLC and GaP films are designed and deposited on ZnS substrate. The results indicate that the average transmittance in the 8~11.5μm waveband is improved from 69.1% to 86.5% The hardness of GaP films (6860MPa) is much higher than that of ZnS substrate (2744MPa), and it also adhere ZnS substrate firmly, so GaP films could offer excellent protection for ZnS windows and domes.
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2001, Vol. 0 
