声光调QNd:YAG激光对硅划片的研究

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材料工程 ›› 1999, Vol. 0 ›› Issue (3) : 45-48.

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特种工艺　

声光调QNd:YAG激光对硅划片的研究

齐军¹, 王昆林¹, 梁绵长¹, 朱允明²

作者信息 +

Study on Laser Scribing of Silicon Wafer with a Q-switched Nd:YAG Laser

Qi Jun Wang¹, Kunlin Liang¹, Mianchang¹, Zhu Yunming²

Author information +

文章历史 +

摘要

研究了利用调QNd:YAG激光对硅片的激光划片,得出了刻槽深度和宽度与工艺参数之间的关系。还从理论上探讨了划片时激光束和材料的相互作用过程,推导了激光束使材料发生熔化和汽化时的能量密度阈值。

Abstract

Laser scribing of silicon wafer with a Q-switched Nd:YAG laser was studied and the relationship between process parameters and groove depth and width has been obtained. The interaction process of laser beam and material was also analyzed theoretically and equation of laser energy density threshold induced material damage was deduced.

导出引用

齐军, 王昆林, 梁绵长, 朱允明. 声光调QNd:YAG激光对硅划片的研究[J]. 材料工程, 1999, 0(3): 45-48

Qi Jun Wang, Kunlin Liang, Mianchang, Zhu Yunming. Study on Laser Scribing of Silicon Wafer with a Q-switched Nd:YAG Laser[J]. Journal of Materials Engineering, 1999, 0(3): 45-48

参考文献

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