冷坩埚原理及其在多晶硅制备中的应用

PDF(1420 KB)

材料工程 ›› 2011, Vol. 0 ›› Issue (7) : 90-96.

扫码查看或转发全文

综述

冷坩埚原理及其在多晶硅制备中的应用

黄锋, 陈瑞润, 郭景杰, 丁宏升, 杨劼人, 苏彦庆, 傅恒志

作者信息 +

Cold Crucible Theory and Its Application in Preparing of Multicrystalline Silicon

HUANG Feng, CHEN Rui-run, GUO Jing-jie, DING Hong-sheng, YANG Jie-ren, SU Yan-qing, FU Heng-zhi

Author information +

文章历史 +

摘要

综述了冷坩埚技术的原理、特点与技术要求,重点介绍了电磁冷坩埚技术的工艺性能与影响因素,总结了各因素对冷坩埚性能的影响规律,最后概述了冷坩埚技术在多晶硅提纯与成型制备中的优势和应用,并展望了其未来的发展。

Abstract

The principle,characteristic and technical requirements of cold crucible are reviewed in this paper.The theory,technical parameters and influencing factors of cold crucible are introduced.Effects of technical factors on cold crucible performance are summarized.The advantages and application of purifying and preparing of multicrytalline silicon with cold crucible are overviewed too.Cold crucible technology will be a hopeful and important technique in materials engineering.

导出引用

黄锋, 陈瑞润, 郭景杰, 丁宏升, 杨劼人, 苏彦庆, 傅恒志. 冷坩埚原理及其在多晶硅制备中的应用[J]. 材料工程, 2011, 0(7): 90-96

HUANG Feng, CHEN Rui-run, GUO Jing-jie, DING Hong-sheng, YANG Jie-ren, SU Yan-qing, FU Heng-zhi. Cold Crucible Theory and Its Application in Preparing of Multicrystalline Silicon[J]. Journal of Materials Engineering, 2011, 0(7): 90-96

中图分类号： TF133

参考文献

[1] 孙大亮,陈焕盗,宋永远.冷舟冷坩埚技术及其在单晶生长中的应用[J]人工晶体学报,1990,19(2):182-176.
[2] 陈瑞润,郭景杰,丁宏升,等.冷坩埚熔铸技术的研究及开发现状[J]铸造,2007,56(5):443-450.
[3] 李正邦.特种冶金新进展[J]中国冶金,2002,(1):19-21,44.
[4] 苏彦庆,郭景杰,贾均.反应性金属的熔炼技术[J]铸造,1997,(7):41-45.
[5] 苏彦庆,郭景杰,刘源,等.Ti-15-3合金真空感应凝壳熔炼(ISM)过程研究[J]特种铸造及有色合金,1999,(6):1-5.
[6] GUO J J,LIU Y,SU Y Q,etc.Skull formation and change during ISM process of Ti-15-3 alloy[J]Transaction of Nonferrous Metals Society of China,2000,10 (1):14-18.
[7] 程荆卫.钛合金熔铸技术及理论研究现状[J]特种铸造及有色合金,2001,(2):70-72.
[8] 贾均.钛铝合金及其熔炼技术[J]特种铸造及有色合金,1998,(4):6-11.
[9] NEGRINI F,FABBRI M,ZUCCARINI M,et al.Electromagnetic control of the meniscus shape during casting in a high frequency magnetic field[J]Energy Conversion & Management,2000,41:1687-1701.
[10] 荣宝,陈峰,国斌.电子束冷床炉发展简况及熔炼工艺探讨[J]钛工业进展,2008,25(5):37-39.
[11] 吕冰,吕应增.等离子熔炼炉及其应用[J]有色金属加工,2009,38(1):16-20.
[12] 马立蒲.刘为超.电子束熔炼技术及其应用[J]有色金属加工,2008,37(6):28-31,36.
[13] 郑魁.钛合金等离子弧熔炼温度场数值模拟及相关参数的研究[D]哈尔滨工业大学工学硕士学位论文,2006.3-7.
[14] 陈瑞润,丁宏升,毕维生,等.电磁冷坩埚技术及其应用[J]稀有金属材料与工程,2005,34(4):510-514.
[15] 卢百平.特种合金感应熔炼电磁约束成形技术若干进展[J]铸造,2007,56(2):117-120.
[16] DENG A Y,WANG E G,HE J C.Effect of structure parameters on power and magnetic field in electromagnetic soft-contact continuous casting system[J]Journal of Iron and Steel Research,2008,15(1):19-24.
[17] KAZUHIKO I,SHIGEO A.The effect of design parameters on the magnetic field distribution around a cold crucible and the heat generation rate in it[J]Modelling and Simulation in Materials Science and Engineering,1995,3(4):473-484.
[18] 王艳丽,丁宏升,毕维生,等.钛合金定向凝固用矩形电磁冷坩埚内的磁场分布特性[J]稀有金属材料与工程,2006,35(10):1597-1601.
[19] EGON W,ANDRIS M,ALFRED M.Electromagnetic field distribution in an induction furnace with cold crucible[J]IEEE Transactions on Magnetics,1996,32(3):1601-1604.
[20] DENG K,ZHOU Y M,REN Z M,et al.Electromagnetic characteristics of levitation melting with cold crucible[J]Transaction of Nonferrous Metals Society of China,1999,9(2):387-392.
[21] QIE D S,ZHOU H,XU J H,et al.Determination of Designing Parameter of Cold Crucible[R]Beijing:Annual Report of China Institute of Atomic Energy,2008.
[22] 董华峰,任忠鸣,钟云波,等.软接触结晶器电磁连铸中磁场的均匀化[J]钢铁研究学报,1998.10(2):5-8.
[23] 任忠鸣,邓康,蒋国昌.软接触结晶器电磁连铸技术的发展[J]钢铁研究学报,2002,14(1):58-62.
[24] 卢百平,沈军,刘林,等.电磁成形中大宽厚比板状件感应加热特性[J]稀有金属材料与工程,2007,36(10):1767-1771.
[25] 王艳丽.钛基合金近矩形冷坩埚连续熔铸与定向凝固工艺基础研究[D]哈尔滨:哈尔滨工业大学博士学位论文,2006.34-35.
[26] 张英明,孙翔云,周廉.浇铸型悬浮熔炼冷坩埚的设计[J]工业加热,1998,(2):1-3.
[27] 冯涤,骆合力,邹敦叙,等.冷坩埚感应悬浮熔炼技术[J]钢铁研究学报,1994,6(4):24-30.
[28] 李桂荣,曹健峰,王宏明,等.电磁技术在金属材料科学与工程中应用[J]材料导报,2006,20(8):58-61.
[29] 吴亚萍.太阳能级多晶硅的冶金制备研究[D]大连:大连理工大学硕士学位论文,2006.33.
[30] 王宏明,王庆富,徐明喜,等.软接触电磁连珠技术的研究进展[J]连铸,2006,(1):32-35.
[31] NEGRINI F,FABBRI M,ZUCCARINI M,et al.Electromagnetic control of the meniscus shape during casting in a high frequency magnetic field[J]Energy Conversion & Management,2000,41:1687-1701.
[32] 库兹明诺夫,洛曼诺娃,奥西科.等.冷坩埚法制取难熔材料[M]北京:冶金工业出版社,2006.7-8,20.
[33] HONG S W,MIN B T,SONG J H,et al.Application of cold crucible for melting of UO2/ZrO2 mixture[J]Materials Science and Engineering A,2003,357:297-303.
[34] MARTIN A G.Crystalline and thin-film silicon solar cells.,state of the art and future potential[J]Solar Energy,2003,74(3):181-192.
[35] ADOLF G,CHRISTOPHER H.Photovoltaic materials,past,present,future[J]Solar Energy Materials and Solar Cells,2000,62(1-2):1-19.
[36] ADOLF G,CHRISTOPHER H,SCHOCK H W.Photovoltaic materials,history,status and outlook[J]Materials Science and Engineering R,2003,40:1-46.
[37] BUONASSISI T,ISTRATOV A A,PICKETT M D,et al.Transition metals in photovoltaic-grade ingot-cast multicrystalline silicon:A_ssessing the role of impurities in silicon nitride crucible lining material[J]Journal of Crystal Growth,2006,287 (2):402-407.
[38] 梅向阳,马文会,戴永年,等.定向凝固技术的发展及其在制备太阳能级硅材料中的应用[J]轻金属,2008,(9):64-71.
[39] 郭景杰,,黄锋,陈瑞润,等.太阳能电池用多晶硅铸造技术研究进展[J]特种铸造及有色合金,2008,28(7):516-521.
[40] OLSEN E,φVRELID E J.Silicon nitride coating and crucibleeffects of using upgraded materials in the casting of multicrystalline silicon ingots[J]Progress in Photovoltaics:Research and Applications,2008,16:93-100.
[41] KVANDE R,ARNBERG L,MARTIN C.Influence of crucible and coating quality on the properties of multicrystalline silicon for solar cells[J]Journal of Crystal Growth,2009,311,765-768.
[42] HITOSHI M,GANESH R B,NAKANO S,etc.Thermodynamicsl analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell[J]Journal of Crystal Growth,2008,310:4666-4671.
[43] 席珍强,杨德仁,陈君.铸造多晶硅的研究进展[J]材料导报,2001,15(2):66-69.
[44] GILLES D,ERIC E,LAUGIER A,et al.Continuous solidification of photovoltaic multicrystalline silicon from an inductive cold crucible[J]Journal of Crystal Growth,1998,193:230-240.
[45] DURAND F.Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics l J]Solar Energy Materials and Solar Cells,2002,72:125-182.
[46] EHRET E,MARTY O.Correlation between electrical activity and extended defect in EMC multicrystalline materials[J]Materials Science and Engineering B,1998,56:24-30.
[47] PERICHAUD I,MARTINUZZI S,DURAND F.Multicrystalline silicon prepared by electromagnetic continuous pulling:recent results and comparison to directional solidification material[J]Solar Energy Materials and Solar Cells,2002,72:101-107.
[48] WU B,STODDARD N,MAR H,et al.Bulk multicrystalline silicon growth for photovoltaic (PV) application[J]Journal of Crystal Growth,2008,310:2178-2184.
[49] EHRET E.Characterization of multicrystalline silicon:comparison between conventional casting and electromagnetic casting processes[J]Solar Energy Materials and Solar Cells,1998,53:313-327.
[50] WlLLEKE G,BITNAR B,WENDLY M,et al.Electromagnetic ribbon:proposal of a novel method for silicon sheet generation[J]Semiconductor Science and Technology,1998,13(4):440-443.
[51] 丁宏升,陈瑞润,黄锋,等.冷坩埚定向凝固太阳能级多晶硅的缺陷控制及组织特征[J]特种铸造及有色合金,2008,(年会专刊):74-76.
[52] 黄莹莹,郭辉,黄建明,等.精炼法提纯冶金硅至太阳能级硅的研究进展[J]功能材料,2007,38(9):1397-1399.
[53] 罗绮雯,陈红雨,唐明成.冶金法提纯太阳能级硅材料的研究进展[J]中国有色冶金,2008,(1):12-14.
[54] ISTRATOV A A,BUONASSISI T,PICKETT M M,et al.Control of metal impurities in "dirty" multicrystalline silicon for solar cells[J]Materials Science and Engineering B,2006,134:282-286.
[55] PIRES J C S,OTUBO J,BRAGA A F B,et al.The purification of metallurgical grade silicon by electron beam melting[J]Journal of Materials Processing Technology,2005,169:16-20.
[56] PIRES J C S,BRAGAB A F B,MEI P R.Profile of impurities in polycrystalline silicon samples purified in an electron beam melting furnace[J]Solar Energy Materials and Solar Cells,2003,79:347-355.
[57] ALEMANY C,TRASSY C,PATEYRON B,et al.Refining of metallurgical-grade silicon by inductive plasma[J]Solar Energy Materials & Solar Cells,2002,72:41-48.
[58] DELANNOY Y,ALEMANY C,LI K I,et al.Plasma-refining process to provide solar-grade silicon[J]Solar Energy Materials & Solar Cells,2002,72:69-75.
[59] WU J J,MA W H,YANG B,et al.Boron removal from metallurgical grade silicon by oxidizing refining[J]Transaction of Nonferrous Metals Society of China,2009,19,463-467.