退火温度对PECVD法制备SiO2/Si3N4光学薄膜性能的影响
吴立宇, 李小强, 王斌, 屈盛官
Effect of annealing temperature on properties of SiO2/Si3N4 optical films prepared by PECVD method
Li-yu WU, Xiao-qiang LI, Bin WANG, Sheng-guan QU
材料工程
.
2020, (12): 75
-81
.
DOI: 10.11868/j.issn.1001-4381.2019.000894
