Preparation technology | Temperature/ ℃ | Preparation period/d | Open porosity/% | Matrix characteristics | Type of fabricated component |
---|---|---|---|---|---|
PIP | 1100-1200 | 30-45 | 10-20 | Low crystallinity,porous, multi-microcrack | Large size and complex shape components with large thickness |
CVI | 1000-1100 | 90 | 10-15 | High crystallinity | Thin-walled components with complex shapes |
RMI | 1600-1700 | 5 | <5 | Containing residual silicon | Complex shape |