图/表 详细信息

SiCf/SiC陶瓷基复合材料制备技术研究进展
王衍飞, 刘荣军, 张金, 杜金平, 李端
材料工程, 2025, 53(4): 52-74.   DOI: 10.11868/j.issn.1001-4381.2024.000144

Preparation technology

Temperature/

Preparation period/d Open porosity/% Matrix characteristics Type of fabricated component
PIP 1100-1200 30-45 10-20

Low crystallinity,porous,

multi-microcrack

Large size and complex shape components with large thickness
CVI 1000-1100 90 10-15 High crystallinity Thin-walled components with complex shapes
RMI 1600-1700 5 <5 Containing residual silicon Complex shape
表3 不同SiC基体制备工艺的对比
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